T1869N22TOF datasheet, PDF - EEWORLD Datasheet

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T1869N22TOF: DescriptionSilicon Controlled Rectifier, 4100A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element,; CategoryAnalog mixed-signal IC Trigger device; File Size532KB，19 Pages; ManufacturerEUPEC [eupec GmbH]

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T1869N22TOF Overview

Silicon Controlled Rectifier, 4100A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element,

T1869N22TOF Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Configuration	SINGLE
Maximum DC gate trigger current	300 mA
JESD-30 code	O-CXDB-X4
Number of components	1
Number of terminals	4
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	4100 A
Off-state repetitive peak voltage	2200 V
Repeated peak reverse voltage	2200 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor

Phase Control Thyristor

Datenblatt / Data sheet

T1869N

Elektrische

Eigenschaften

= -40°C... T

vj max

Vorläufige Daten

Preliminary Data

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

Kenndaten

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85 °C

= 60 °C

DRM

RRM

1600

1800

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1600

1800

1700

1900

2000 V

2200 V

2000 V

2200 V

2100 V

2300 V

4100 A

1866 A

2600 A

40000 A

35000 A

= +25°C... T

vj max

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

5.Kennbuchstabe / 5

letter F

8000 10³ A²s

6125 10³ A²s

200 A/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlaßkennlinie

on-state characteristic

⋅

Ln ( i

⋅

= T

vj max

, i

= 8 kA

= T

vj max

, i

= 2 kA

= T

vj max

= T

vj max

= T

vj max

(TO)

max.

2,20 V

1,26 V

0,90 V

0,155 mΩ

5,416E-01

1,535E-04

6,292E-02

-1,530E-03

max.

300 mA

2,5 V

10 mA

5 mA

0,25 V

300 mA

1500 mA

250 mA

4 µs

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

1) Gehäusegrenzstrom 36 kA (50 Hz Sinushalbwelle). / peak case non-rupture current 36 kA (50 Hz sinusoidal half-wave).

prepared by: K.-A.Rüther

approved by: J.Novotny

date of publication:

revision:

01.06.99

SZ-M / 01.06.99, K.-A. Rüther

A 109/99

Seite/page

1/18

T1869N22TOF Related Products

	T1869N22TOF	T1869N16TOF	T1869N20TOF	T1869N18TOF
Description	Silicon Controlled Rectifier, 4100A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element,	Silicon Controlled Rectifier, 4100A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,	Silicon Controlled Rectifier, 4100A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 4100A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element,
Reach Compliance Code	unknown	unknown	unknown	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	300 mA	300 mA	300 mA	300 mA
JESD-30 code	O-CXDB-X4	O-CXDB-X4	O-CXDB-X4	O-CXDB-X4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	4100 A	4100 A	4100 A	4100 A
Off-state repetitive peak voltage	2200 V	1600 V	2000 V	1800 V
Repeated peak reverse voltage	2200 V	1600 V	2000 V	1800 V
surface mount	YES	YES	YES	YES
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Trigger device type	SCR	SCR	SCR	SCR
Maker	-	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]

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