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T1869N16TOF

Description
Silicon Controlled Rectifier, 4100A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size532KB,19 Pages
ManufacturerEUPEC [eupec GmbH]
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T1869N16TOF Overview

Silicon Controlled Rectifier, 4100A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,

T1869N16TOF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current300 mA
JESD-30 codeO-CXDB-X4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current4100 A
Off-state repetitive peak voltage1600 V
Repeated peak reverse voltage1600 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
Base Number Matches1
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T1869N
Elektrische
T
Eigenschaften
= -40°C... T
vj
vj max
Vorläufige Daten
Preliminary Data
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
Kenndaten
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85 °C
T
C
= 60 °C
V
DRM
,V
RRM
1600
1800
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1600
1800
1700
1900
2000 V
2200 V
2000 V
2200 V
2100 V
2300 V
4100 A
1866 A
2600 A
40000 A
35000 A
1)
T
vj
= +25°C... T
vj max
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuchstabe / 5
th
letter F
8000 10³ A²s
6125 10³ A²s
200 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
v
T
=
A
+
B
i
T
+
C
Ln ( i
T
+
1)
+
D
i
T
T
vj
= T
vj max
, i
T
= 8 kA
T
vj
= T
vj max
, i
T
= 2 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
A=
B=
C=
D=
I
GT
V
GT
I
GD
V
GD
I
H
max.
max.
2,20 V
1,26 V
0,90 V
0,155 mΩ
5,416E-01
1,535E-04
6,292E-02
-1,530E-03
max.
max.
max.
max.
max.
max.
max.
max.
max.
300 mA
2,5 V
10 mA
5 mA
0,25 V
300 mA
1500 mA
250 mA
4 µs
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
T
vj
= 25°C, v
D
= 6 V, R
GK
10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
1) Gehäusegrenzstrom 36 kA (50 Hz Sinushalbwelle). / peak case non-rupture current 36 kA (50 Hz sinusoidal half-wave).
prepared by: K.-A.Rüther
approved by: J.Novotny
date of publication:
revision:
01.06.99
1
SZ-M / 01.06.99, K.-A. Rüther
A 109/99
Seite/page
1/18

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Description Silicon Controlled Rectifier, 4100A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, Silicon Controlled Rectifier, 4100A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element, Silicon Controlled Rectifier, 4100A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, Silicon Controlled Rectifier, 4100A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element,
Reach Compliance Code unknown unknown unknown unknow
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current 300 mA 300 mA 300 mA 300 mA
JESD-30 code O-CXDB-X4 O-CXDB-X4 O-CXDB-X4 O-CXDB-X4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 4100 A 4100 A 4100 A 4100 A
Off-state repetitive peak voltage 1600 V 2200 V 2000 V 1800 V
Repeated peak reverse voltage 1600 V 2200 V 2000 V 1800 V
surface mount YES YES YES YES
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Trigger device type SCR SCR SCR SCR
Maker EUPEC [eupec GmbH] - EUPEC [eupec GmbH] EUPEC [eupec GmbH]

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