F4-200R06KL4 datasheet, PDF - EEWORLD Datasheet

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F4-200R06KL4: DescriptionInsulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, MODULE-26; CategoryDiscrete semiconductor The transistor; File Size349KB，8 Pages; ManufacturerEUPEC [eupec GmbH]

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F4-200R06KL4 Overview

Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, MODULE-26

F4-200R06KL4 Parametric

Parameter Name	Attribute value
package instruction	MODULE-26
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	225 A
Collector-emitter maximum voltage	600 V
Configuration	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code	R-XUFM-X26
Number of components	4
Number of terminals	26
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	330 ns
Nominal on time (ton)	230 ns
Base Number Matches	1

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