EEPROM, 8KX8, 120ns, Parallel, CMOS, CDIP24, HERMETIC SEALED, CERDIP-24
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | HERMETIC SEALED, CERDIP-24 |
| Reach Compliance Code | unknown |
| Maximum access time | 120 ns |
| command user interface | NO |
| Data polling | NO |
| JESD-30 code | R-GDIP-T24 |
| JESD-609 code | e0 |
| length | 32.07 mm |
| memory density | 65536 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 24 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 8KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| page size | 32 words |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Maximum seat height | 5.72 mm |
| Maximum standby current | 0.0005 A |
| Maximum slew rate | 0.06 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| switch bit | YES |
| width | 15.24 mm |
| Base Number Matches | 1 |
| X68C64DM | X68C64ST1 | X68C64DI | X68C64SMT1 | X68C64SIT1 | |
|---|---|---|---|---|---|
| Description | EEPROM, 8KX8, 120ns, Parallel, CMOS, CDIP24, HERMETIC SEALED, CERDIP-24 | EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24 | EEPROM, 8KX8, 120ns, Parallel, CMOS, CDIP24, HERMETIC SEALED, CERDIP-24 | EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24 | EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24 |
| package instruction | HERMETIC SEALED, CERDIP-24 | SOP, | HERMETIC SEALED, CERDIP-24 | SOP, | SOP, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 120 ns | 120 ns | 120 ns | 120 ns | 120 ns |
| JESD-30 code | R-GDIP-T24 | R-PDSO-G24 | R-GDIP-T24 | R-PDSO-G24 | R-PDSO-G24 |
| length | 32.07 mm | 15.4 mm | 32.07 mm | 15.4 mm | 15.4 mm |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| memory width | 8 | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 24 | 24 | 24 | 24 | 24 |
| word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| character code | 8000 | 8000 | 8000 | 8000 | 8000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 70 °C | 85 °C | 125 °C | 85 °C |
| Minimum operating temperature | -55 °C | - | -40 °C | -55 °C | -40 °C |
| organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | DIP | SOP | DIP | SOP | SOP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Programming voltage | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 5.72 mm | 2.65 mm | 5.72 mm | 2.65 mm | 2.65 mm |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | YES | NO | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | COMMERCIAL | INDUSTRIAL | MILITARY | INDUSTRIAL |
| Terminal form | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| Terminal pitch | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| width | 15.24 mm | 7.5 mm | 15.24 mm | 7.5 mm | 7.5 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | - |
| Other features | - | 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 100 YEARS | - | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION | 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 100 YEARS |
| Data retention time - minimum | - | 100 | - | 100 | 100 |
| Durability | - | 100000 Write/Erase Cycles | - | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles |
| Maximum write cycle time (tWC) | - | 5 ms | - | 5 ms | 5 ms |
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