X68C64SMT1 datasheet, PDF - EEWORLD Datasheet

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X68C64SMT1: DescriptionEEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24; Categorystorage storage; File Size323KB，10 Pages; ManufacturerXicor Inc.

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X68C64SMT1 Overview

EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24

X68C64SMT1 Parametric

Parameter Name	Attribute value
package instruction	SOP,
Reach Compliance Code	unknown
Maximum access time	120 ns
Other features	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION
Data retention time - minimum	100
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G24
length	15.4 mm
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	24
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	2.65 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	7.5 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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X68C64SMT1 Related Products

	X68C64SMT1	X68C64ST1	X68C64DM	X68C64DI	X68C64SIT1
Description	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24	EEPROM, 8KX8, 120ns, Parallel, CMOS, CDIP24, HERMETIC SEALED, CERDIP-24	EEPROM, 8KX8, 120ns, Parallel, CMOS, CDIP24, HERMETIC SEALED, CERDIP-24	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO24, PLASTIC, SOIC-24
package instruction	SOP,	SOP,	HERMETIC SEALED, CERDIP-24	HERMETIC SEALED, CERDIP-24	SOP,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum access time	120 ns	120 ns	120 ns	120 ns	120 ns
JESD-30 code	R-PDSO-G24	R-PDSO-G24	R-GDIP-T24	R-GDIP-T24	R-PDSO-G24
length	15.4 mm	15.4 mm	32.07 mm	32.07 mm	15.4 mm
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8
Number of functions	1	1	1	1	1
Number of terminals	24	24	24	24	24
word count	8192 words	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	70 °C	125 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-	-55 °C	-40 °C	-40 °C
organize	8KX8	8KX8	8KX8	8KX8	8KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY
encapsulated code	SOP	SOP	DIP	DIP	SOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	2.65 mm	2.65 mm	5.72 mm	5.72 mm	2.65 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	COMMERCIAL	MILITARY	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal pitch	1.27 mm	1.27 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
width	7.5 mm	7.5 mm	15.24 mm	15.24 mm	7.5 mm
Other features	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	100K ENDURANCE WRITE CYCLES; DATA RETENTION = 100 YEARS	-	-	100K ENDURANCE WRITE CYCLES; DATA RETENTION = 100 YEARS
Data retention time - minimum	100	100	-	-	100
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	-	100000 Write/Erase Cycles
Maximum write cycle time (tWC)	5 ms	5 ms	-	-	5 ms
Base Number Matches	1	1	1	1	-

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