L8550HQLT1 datasheet, PDF - EEWORLD Datasheet

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L8550HQLT1: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), PNP; CategoryDiscrete semiconductor The transistor; File Size47KB，3 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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L8550HQLT1 Overview

Small Signal Bipolar Transistor, 1.5A I(C), PNP

L8550HQLT1 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	1.5 A
Configuration	Single
Minimum DC current gain (hFE)	150
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

FEATURE

High current capacity in compact package.

=1.5A.

Epitaxial planar type.

NPN complement: L8050H

Pb-Free Package is available.

L8550H*LT1

SOT–23

COLLECTOR

DEVICE MARKING AND ORDERING INFORMATION

Device

L8550HPLT1

L8550HPLT1G

L8550HQLT1

L8550HQLT1G

Marking

1HB

(Pb-Free)

1HD

(Pb-Free)

Shipping

3000/Tape&Reel

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-continuoun

Symbol

CEO

CBO

EBO

Max

1500

Unit

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR-5 Board,(1)

=25°C

Derate above 25°C

Thermal Resistance,Junction to Ambient

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

J A

300

2.4

417

-55 to +150

mW/°C

°C/W

°C

Symbol

Max

Unit

225

1.8

556

mW/°C

°C/W

Version 1.1

L8550H*LT1-1/3

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