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L8550PLT1G

Description
Small Signal Bipolar Transistor, 0.8A I(C), PNP,
CategoryDiscrete semiconductor    The transistor   
File Size201KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

L8550PLT1G Overview

Small Signal Bipolar Transistor, 0.8A I(C), PNP,

L8550PLT1G Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
3
L8550PLT1G
Series
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
L8550PLT1G
L8550PLT3G
L8550QLT1G
L8550QLT3G
L8550RLT1G
L8550RLT3G
L8550SLT1G
L8550SLT3G
Marking
85P
85P
1YD
1YD
1YF
1YF
1YH
1YH
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
2
EMITTER
1
BASE
COLLECTOR
3
SOT– 23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-25
-40
-5
-800
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board
(1)
T
A
= 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
Max
225
R
θJA
P
D
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /°C
°C/W
mW
mW /°C
°C/W
°C
R
θJA
T
J
, T
stg
Rev.O 1/4

L8550PLT1G Related Products

L8550PLT1G L8550QLT1G L8550RLT1G
Description Small Signal Bipolar Transistor, 0.8A I(C), PNP, Small Signal Bipolar Transistor, 0.8A I(C), PNP, Small Signal Bipolar Transistor, 0.8A I(C), PNP
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A
Configuration Single Single Single
Minimum DC current gain (hFE) 100 150 200
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W
surface mount YES YES YES
Base Number Matches 1 1 -
ECCN code - EAR99 EAR99
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