BST39TA datasheet, PDF - EEWORLD Datasheet

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BST39TA: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

BST39TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
Base Number Matches	1

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 – JUNE 1996

FEATURES

* Fast Switching

* High h

FE

.

COMPLEMENTARY TYPE –

PARTMAKING DETAIL –

7

BST39

C

BST16

AT1

C

B

SOT89

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

400

350

5

1

500

1

-65 to +150

UNIT

V

A

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Output Capacitance

Input Capacitance

Transition Frequency

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

V

CE(sat)

V

BE(sat)

h

FE

C

obo

C

ibo

f

T

70

40

2

20

pF

MHz

MIN.

400

350

5

20

0.5

1.3

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=10µA

I

C

=1mA*

I

E

=10µA

V

CB

=300V

I

C

=50mA, I

B

=4mA

I

C

=50mA, I

B

=4mA

I

C

=20mA, V

CE

=10V*

V

CB

=10V, f=1MHz

V

EB

=10V, f=1MHz

I

C

=10mA, V

CE

=10V,

f=5MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2%

For typical characteristics graphs see FMMT458 datasheet.

3 - 77

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