MNT-LB32P20 datasheet, PDF - EEWORLD Datasheet

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MNT-LB32P20: DescriptionPower Field-Effect Transistor, 32A I(D), 200V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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MNT-LB32P20 Overview

Power Field-Effect Transistor, 32A I(D), 200V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN

MNT-LB32P20 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-D5
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	COMPLEX
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	32 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-D5
Number of components	4
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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MNT - LB32P16

MNT - LB32P20

MECHANICAL DATA

Dimensions in mm

24.0

10.5

SMARTPACK POWER MODULE

7.0

POWER MOSFETS FOR

AUDIO APPLICATIONS

10.0

TYP

28.5

57.0

FEATURES

6.35

TYP

ł 4.25

• P - CHANNEL POWER MOSFETS

• HIGH SPEED SWITCHING

14.0

10.0

0.8

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

43.5

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

• N - CHANNEL AVAILABLE

CASE 2

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

DSX

Drain – Source Voltage

V

GSS

I

D

I

D(PK)

P

D

T

stg

T

j

R

θJC

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

Total Power Dissipation

Storage Temperature Range

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

@ T

case

= 25°C

LB32P16

-160V

±14V

- 32A

500W

–55 to 150°C

150°C

0.3°C/W

LB32P20

-200V

Magnatec.

Telephone +44(0)1455 554711.

Fax +44(0)1455 558843.

E-mail:

magnatec@semelab.co.uk

Website:

http://www.semelab.co.uk

Tentative 6/99

MNT-LB32P20 Related Products

	MNT-LB32P20	MNT-LB32P16
Description	Power Field-Effect Transistor, 32A I(D), 200V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN	Power Field-Effect Transistor, 32A I(D), 160V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN
package instruction	FLANGE MOUNT, R-PSFM-D5	FLANGE MOUNT, R-PSFM-D5
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Configuration	COMPLEX	COMPLEX
Minimum drain-source breakdown voltage	200 V	160 V
Maximum drain current (ID)	32 A	32 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-D5	R-PSFM-D5
Number of components	4	4
Number of terminals	5	5
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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