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BRY55-200

Description
Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-226AA
CategoryAnalog mixed-signal IC    Trigger device   
File Size87KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BRY55-200 Overview

Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-226AA

BRY55-200 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Nominal circuit commutation break time30 µs
ConfigurationSINGLE
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JEDEC-95 codeTO-226AA
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Maximum leakage current0.1 mA
On-state non-repetitive peak current8 A
Number of components1
Number of terminals3
Maximum on-state voltage1.7 V
Maximum on-state current800 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current0.8 A
Off-state repetitive peak voltage200 V
Repeated peak reverse voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BRY55-30/D
Silicon Controlled Rectifiers
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92)
package which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current — 200
µA
Maximum
Low Reverse and Forward Blocking Current — 100
µA
Maximum, TC = 125°C
Low Holding Current — 5 mA Maximum
Glass-Passivated Surface for Reliability and Uniformity
BRY55-30*
thru 600*
SCRs
0.8 AMPERE RMS
30 TO 600 VOLTS
CASE 29-04
(TO-226AA)
STYLE 3
WITH TO-18 LEADFORM*
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(RGK = 1000
Ω,
TJ = 25 to 125°C)
Marking: BRY55-1 . . . BRY55-30
-2 . . . BRY55-60
-3 . . . BRY55-100
-4 . . . BRY55-200
-6 . . . BRY55-400
-7 . . . BRY55-500
-8 . . . BRY55-600
Forward Current RMS (All Conduction Angles)
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations, TA = 25°C
(t = 8.3 ms)
Peak Gate Power — Forward, TA = 25°C
Peak Gate Current Forward, TA = 25°C
(300
µs,
120 PPS)
Peak Gate Voltage — Reverse
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
Symbol
VRRM, VDRM
30
60
100
200
400
500
600
IT(RMS)
ITSM
I2t
PGM
IGFM
VGRM
TJ
Tstg
0.8
8
0.15
0.1
1
5
–40 to +125
–40 to +150
+230
Amp
Amps
A2s
Watt
Amp
Volts
°C
°C
°C
Value
Unit
Volts
Lead Solder Temperature ( 1.5 mm from case, 10 s max.)
*European part numbers only. Package is Case 29 with Leadform 18.
t
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1

BRY55-200 Related Products

BRY55-200 BRY55-30 BRY55-400 BRY55-60
Description Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-226AA Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-226AA Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-226AA Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-226AA
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown
Nominal circuit commutation break time 30 µs 30 µs 20 µs 30 µs
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current 0.2 mA 0.2 mA 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 0.8 V 0.8 V 0.8 V 0.8 V
Maximum holding current 5 mA 5 mA 5 mA 5 mA
JEDEC-95 code TO-226AA TO-226AA TO-226AA TO-226AA
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0
Maximum leakage current 0.1 mA 0.1 mA 0.1 mA 0.1 mA
On-state non-repetitive peak current 8 A 8 A 8 A 8 A
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum on-state voltage 1.7 V 1.7 V 1.7 V 1.7 V
Maximum on-state current 800 A 800 A 800 A 800 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 0.8 A 0.8 A 0.8 A 0.8 A
Off-state repetitive peak voltage 200 V 30 V 400 V 60 V
Repeated peak reverse voltage 200 V 30 V 400 V 60 V
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR
Base Number Matches 1 1 1 1
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