PT415 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Analog mixed-signal IC> Trigger device> PT415

PT415: Description4 Quadrant Logic Level TRIAC, 400V V(DRM), 15A I(T)RMS; CategoryAnalog mixed-signal IC Trigger device; File Size487KB，4 Pages; ManufacturerHutson Industries

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PT415 Overview

4 Quadrant Logic Level TRIAC, 400V V(DRM), 15A I(T)RMS

PT415 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	PRESS FIT, O-MUPF-D2
Reach Compliance Code	unknown
Shell connection	MAIN TERMINAL 2
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	60 mA
JESD-30 code	O-MUPF-D2
JESD-609 code	e0
Maximum leakage current	1 mA
Number of components	1
Number of terminals	2
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	PRESS FIT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	15 A
Off-state repetitive peak voltage	400 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches	1

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MAXIMUM RATINGS

REPETITIVE PEAK OFF-STATE VOLTAGE (1)

GATE OPEN, AND TJ = 110° C

RMS ON-STATE CURRENT AT TC = 80º C AND

CONDUCTION, ANGLE OF 360º

PEAK SURGE (NON-REPETITIVE) ON-STATE

CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ

PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.

PEAK GATE – POWER DISSIPATION AT IGT < IGTM

AVERAGE GATE - POWER DISSIPATION

STORAGE TEMPERATURE RANGE

OPERATING TEMPERATURE RANGE, TJ

ELECTRICAL CHARACTERISTICS

AT SPECIFIED CASE TEMPERATURE

PEAK OFF - STATE CURRENT (1) GATE OPEN

TC = 110° C VDRM = MAX. RATING

MAXIMUM ON - STATE VOLTAGE, (1)

AT TC = 25° C AND IT = RATED AMPS

DC HOLDING CURRENT, (1) GATE

OPEN AND TC = 25° C

CRITICAL RATE-OF-RISE OF OFF-

STATE VOLTAGE, (1) FOR VD =

VDRM GATE OPEN, TC = 110° C

CRITICAL RATE-OF-RISE OF

COMMUTATION VOLTAGE, (1) AT

TC = 80° C, GATE UNENERGIZED,

VD = VDRM, IT = IT (RMS)

DC GATE - TRIGGER CURRENT FOR

VD = 12VDC. RL = 30

Ω

AND AT TC = 25° C

(T2 + GATE + T2 - GATE-) Q 1 & 3

(T2 + GATE - T2 - GATE +) Q 2 & 4

DC GATE - TRIGGER VOLTAGE FOR

VD = 12VDC. RL = 30

Ω

AND AT TC = 25° C

GATE CONTROLLED TURN-ON TIME

FOR VD = VDRM IGT = 200MA, TR = 0.1 µSEC.

IT = 10A (PEAK) AND TC = 25° C

THERMAL RESISTANCE, JUNCTION-TO-CASE

PRESS-FIT

STUD

ISOLATED STUD

SYMBOL VDRM

VDRM

IT(RMS)

ITSM

IGTM

PGM

PG(AV)

TSTG

TOPER

200

400

600

*T215

*T415

*T615

150

0.8

DEVICE NUMBERS

*T225

*T425

*T625

250

*T230

*T430

*T630

300

*T240

*T440

*T640

400

0.75

UNITS

VOLT

AMP

WATT

°C

0.8

0.75

-40 to +150

-40 to +110

IDRM

VTM

IHO

CRITICAL

dv/dt

COMMUTATING

1.0

2.2

100

1.0

2.5

100

1.0

2.0

200

1.0

2.0

200

MAX.

VOLT

MAX.

V/µSEC.

dv/dt

V/µSEC.

IGT

(2)

100 I, III 100 I, III 100 I, III

150 II, IV 150 II, IV 150 II, IV

2.5

100 I, III

150 II, IV

2.5

MAX.

VOLT

MAX.

µSEC.

VGT

TGT

R0J-C

1.8

2.1

1.8

2.1

1.8

2.1

1.8

2.1

°C / WATT

TYP

Notes:

(1) All values apply in either direction.

(2) Other gate options available; Consult factory.

SIP

PRESS FIT

PRESS FIT WITH STUD MOUNT

WARNING

Isolated stud products should be handled with care. The ceramic used

in these thyristors contains BERYLLIUM OXIDE as a major ingredient.

DO NOT crush, grind or abrade these portions of the thyristors because

the dust resulting from such action may be HARZARDOUS if INHALED.

PRESS FIT WITH ISOLATED STUD

MOUNT

*Add prefix for package style desired.

SOLID STATE CONTROL DEVICES

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