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SMAL850-60

Description
Infrared LED, 1-Element, 850nm, ROHS COMPLIANT, SMD, 2 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size106KB,1 Pages
ManufacturerUshio Opto Semiconductors Inc.
Download Datasheet Parametric Compare View All

SMAL850-60 Overview

Infrared LED, 1-Element, 850nm, ROHS COMPLIANT, SMD, 2 PIN

SMAL850-60 Parametric

Parameter NameAttribute value
MakerUshio Opto Semiconductors Inc.
package instructionROHS COMPLIANT, SMD, 2 PIN
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Maximum forward current1.2 A
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-30 °C
Optoelectronic device typesINFRARED LED
Nominal output power1100 mW
peak wavelength850 nm
shapeROUND
Base Number Matches1
epitex
Opto-Device & Custom LED
Infrared illuminator SMAL850-60
Lead ( Pb ) Free Product – RoHS Compliant
SMAL850-60
SMD type Infrared illuminator on AlN ceramics
SMAL850-60 is a wide viewing and extremely high output power illuminator assembled with a total of
60 high efficiency AlGaAs diode chips, mounted on an AlN ceramics and covered with clear silicone
resin. These devices are designed for high current operation with proper heat sinking to improve
thermal conductive efficiency.
Features
♦Outer
dimension (Unit: mm)
1) High reliability
2) Compact AlN ceramics PCB
3) High output power at 850nm
Specifications
1) Product name
2) Spec. No.
3) Chip
(1) Material
(2) Peak wavelength
4) Package
(1) PCB
(2) Lens
IR illuminator
SMAL850-60
AlGaAs
850nm
AlN ceramics
Epoxy or Silicone
♦Absolute
Maximum Ratings
Item
Symbol Maximum Rated Value Unit
Ambient Temp.
Power Dissipation
PD
10.0
W
Ta=25°C
Forward Current
I
F
1200
mA
Ta=25°C
Pulse Forward Current
I
FP
5
A
Ta=25°C
Reverse Voltage
V
R
50
V
Ta=25°C
Junction Tempperature
T
J
100
°C
Thermal Resistance
R
thja
6.3
K/W
Operating Temperature
T
OPR
-30 ~ +80
°C
-30 ~ +110
°C
Storage Temperature
T
STG
Soldering Temperature
T
SOL
250
°C
‡Pulse forward current condition: duty=1% and pulse width=1us.
‡Soldering condition: soldering condition must be completed within 3 seconds at 250°C
‡Thermal resistance: junction – ambient air, mounted on Cu metal block.
♦Electro-Optical
Characteristics
Item
Symbol Condition
Minimum
Typical Maximum
Unit
Total Radiated Power
P
O
I
F
=800mA
1100
mW
Total Radiated Power
P
O
I
FP
=4A
5500
mW
Radiant Intensity
I
E
I
F
=800mA
180
mW/sr
Forward Voltage
V
F
I
F
=800mA
7.80
V
Reverse Current
V
R
I
R
=10uA
30
V
I
F
=800mA
Peak Wavelength
840
850
860
nm
λ
P
Half Width
I
F
=800mA
40
nm
∆λ
Viewing Half Angle
I
F
=800mA
±72
deg.
θ
1/2
Rise Time
tr
I
F
=100mA
15
ns
Fall Time
tf
I
F
=100mA
10
ns
‡Total Radiated Power is measured by S3584-08
‡LED is required to keep less than 60°C.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com

SMAL850-60 Related Products

SMAL850-60
Description Infrared LED, 1-Element, 850nm, ROHS COMPLIANT, SMD, 2 PIN
Maker Ushio Opto Semiconductors Inc.
package instruction ROHS COMPLIANT, SMD, 2 PIN
Reach Compliance Code unknown
Other features HIGH RELIABILITY
Configuration SINGLE
Maximum forward current 1.2 A
Number of functions 1
Maximum operating temperature 80 °C
Minimum operating temperature -30 °C
Optoelectronic device types INFRARED LED
Nominal output power 1100 mW
peak wavelength 850 nm
shape ROUND
Base Number Matches 1
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