BDS29CSMD datasheet, PDF - EEWORLD Datasheet

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BDS29CSMD: DescriptionPower Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size10KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BDS29CSMD Overview

Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN

BDS29CSMD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-276AB
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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BDS29CSMD

Dimensions in mm (inches).

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

3.70 (0.146)

3.41 (0.134)

3.60 (0.142)

Max.

4.14 (0.163)

3.84 (0.151)

Bipolar NPN Device in a

Hermetically sealed

Ceramic Surface Mount

Package for High

Reliability Applications

0.76

(0.030)

min.

16.02 (0.631)

15.73 (0.619)

Bipolar NPN Device.

CEO

= 120V

= 30A

10.69 (0.421)

10.39 (0.409)

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

0.50 (0.020)

0.26 (0.010)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

SMD1 (TO276AB)

PINOUTS

1 – Base

2 – Collector

3 – Emitter

Parameter

CEO

C(CONT)

Test Conditions

Min.

Typ.

Max.

120

Units

@ 5/20 (V

/ I

)

1000

100

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

15-Aug-02

BDS29CSMD Related Products

	BDS29CSMD	BDS29CSMDR4
Description	Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Is it Rohs certified?	incompatible	conform to
package instruction	HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN	HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	30 A	30 A
Collector-emitter maximum voltage	120 V	120 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	1000	1000
JEDEC-95 code	TO-276AB	TO-276AB
JESD-30 code	R-CBCC-N3	R-CBCC-N3
Number of components	1	1
Number of terminals	3	3
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz
Base Number Matches	1	1

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