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HMBT1815-C4B

Description
TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HMBT1815-C4B Overview

TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23

HMBT1815-C4B Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Base Number Matches1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2004.08.13
Page No. : 1/4
HMBT1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1815 is designed for use in driver stage of AF amplifier and general
purpose amplification.
SOT-23
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°C
Junction Temperature.................................................................................................. 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................ 225 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ....................................................................................................... 60 V
V
CEO
Collector to Emitter Voltage .................................................................................................... 50 V
V
EBO
Emitter to Base Voltage ............................................................................................................ 5 V
I
C
Collector Current ..................................................................................................................... 150 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
60
50
5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1
700
-
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
mV
V
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CB
=60V
V
EB
=5V
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
V
CE
=10V, I
C
=1mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE1
Rank
Range
C4Y
120-240
C4G
200-400
C4B
350-700
HMBT1815
HSMC Product Specification

HMBT1815-C4B Related Products

HMBT1815-C4B HMBT1815-C4G HMBT1815-C4Y
Description TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23 TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23 TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23
Reach Compliance Code unknown unknown unknown
Base Number Matches 1 1 1
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