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HSC2240Y

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size56KB,5 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric Compare View All

HSC2240Y Overview

Transistor

HSC2240Y Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
surface mountNO
Base Number Matches1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6529
Issued Date : 1992.12.16
Revised Date : 2005.02.15
Page No. : 1/5
HSC2240
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low noise audio amplifier applications
Absolute Maximum Ratings
TO-92
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ..................................................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 625 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ......................................................................................................................... 150 V
V
CEO
Collector to Emitter Voltage ...................................................................................................................... 150 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 5 V
I
C
Collector Current ....................................................................................................................................... 100 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
V
BE(on)
*h
FE
f
T
Cob
Min.
150
150
5
-
-
-
500
120
-
-
Typ.
-
-
-
-
-
-
-
-
100
3
Max.
-
-
-
100
100
300
800
400
-
-
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=120V, I
E
=0
V
EB
=5V, I
C
=0
I
B
=1mA, I
C
=10mA
I
C
=2mA, V
CE
=6V
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=1mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification of hFE
Rank
Range
Y
120-240
GR
200-400
HSC2240
HSMC Product Specification

HSC2240Y Related Products

HSC2240Y HSC2240GR
Description Transistor Transistor
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 120 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.625 W
surface mount NO NO
Base Number Matches 1 1

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