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RS3FS

Description
Rectifier Diode, 1 Element, 3A, 1500V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size57KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric View All

RS3FS Overview

Rectifier Diode, 1 Element, 3A, 1500V V(RRM),

RS3FS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current150 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage1500 V
Maximum reverse recovery time0.5 µs
surface mountNO
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
RS3FS
VOLTAGE RANGE: 1500 V
CURRENT: 3.0 A
FAST RECOVERY RECT IFIER
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries
U/L
recognition
94V -0
DO - 27
MECHANICAL DATA
Cas e:JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
RS3FS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
1500
1050
1500
3.0
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
150.0
A
Maximum instantaneous f orw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.1
10.0
100.0
500
32
22
-55----+150
-55----+150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V D C.
3. Therm al resistance f rom junc tion to am bient.
www.galaxycn.com
Document Number 0261066
BL
GALAXY ELECTRICAL
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