BSP109 datasheet, PDF - EEWORLD Datasheet

BSP109: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size150KB，4 Pages; ManufacturerNorth American Philips Discrete Products Div

Download Datasheet Parametric Compare View All

BSP109 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

	BSP109	BSP103	BSP105
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown
Configuration	Single	Single	Single
Maximum drain current (Abs) (ID)	0.5 A	0.75 A	0.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	-	North American Philips Discrete Products Div	North American Philips Discrete Products Div

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components