MAC997 Series
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO–92 package which is readily adaptable for use in
automatic insertion equipment.
•
One–Piece, Injection–Molded Package
•
Blocking Voltage to 600 Volts
•
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
•
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
•
Improved Noise Immunity (dv/dt Minimum of 20 V/µsec at 110°C)
•
Commutating di/dt of 1.6 Amps/msec at 110°C
•
High Surge Current of 8 Amps
•
Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date
Code
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage
(TJ = –40 to +110°C)(1)
Sine Wave 50 to 60 Hz, Gate Open
MAC997A6,B6
MAC997A8,B8
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = +50°C)
Peak Non–Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(TC = 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Voltage
(t
2.0
m
s, TC = +80°C)
Symbol
VDRM,
VRRM
400
600
IT(RMS)
0.8
Amp
Value
Unit
Volts
1
2
3
Preferred Device
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TRIACS
0.8 AMPERE RMS
400 thru 600 VOLTS
MT2
G
MT1
TO–92 (TO–226AA)
CASE 029
STYLE 12
PIN ASSIGNMENT
ITSM
8.0
Amps
1
2
I2t
VGM
PGM
PG(AV)
IGM
TJ
Tstg
.26
5.0
5.0
0.1
1.0
–40 to
+110
–40 to
+150
A2s
Volts
3
Main Terminal 1
Gate
Main Terminal 2
v
v
v
ORDERING INFORMATION
Watts
Watt
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 490 of this data sheet.
Peak Gate Power
(t
2.0
m
s, TC = +80°C)
Average Gate Power
(TC = 80°C, t
8.3 ms)
v
Peak Gate Current
(t
2.0
m
s, TC = +80°C)
Operating Junction Temperature Range
Storage Temperature Range
Amp
°C
°C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2000
483
May, 2000 – Rev. 2
Publication Order Number:
MAC997/D
MAC997 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
R
θJC
R
θJA
TL
Max
75
200
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM, IRRM
TJ = 25°C
TJ = +110°C
—
—
—
—
10
100
µA
µA
ON CHARACTERISTICS
Peak On–State Voltage
(ITM = .85 A Peak; Pulse Width
"
v
2.0 ms, Duty Cycle
v
2.0%)
VTM
IGT
—
—
1.9
Volts
mA
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MAC997A6,A8
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MAC997B6,B8
—
—
—
—
—
—
—
—
IL
—
—
—
—
VGT
—
—
—
—
VGD
0.1
—
—
—
—
—
—
—
—
5.0
5.0
5.0
7.0
3.0
3.0
3.0
5.0
mA
Latching Current (VD = 12 V, IG = 10 mA)
MT2(+), G(+) All Types
MT2(+), G(–) All Types
MT2(–), G(–) All Types
MT2(–), G(+) All Types
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G(–) All Types
MT2(–), G(–) All Types
MT2(–), G(+) All Types
Gate Non–Trigger Voltage
(VD = 12 V, RL = 100 Ohms, TJ = 110°C)
All Four Quadrants
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
1.6
10.5
1.5
2.5
15
20
15
15
Volts
.66
.77
.84
.88
—
2.0
2.0
2.0
2.5
—
Volts
IH
tgt
—
—
1.5
2.0
10
—
mA
µs
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = .84 A, Commutating dv/dt = 1.5 V/µs, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C)
Repetitive Critical Rate of Rise of On–State Current
Pulse Width = 20
µs,
IPKmax = 15 A, diG/dt = 1 A/µs, f = 60 Hz
di/dt(c)
1.6
—
—
A/ms
dv/dt
di/dt
20
—
60
—
—
10
V/µs
A/µs
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484
MAC997 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IH
Quadrant 3
VTM
MainTerminal 2 –
IRRM at VRRM
on state
VTM
IH
off state
+ Voltage
IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(–) IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant I
IGT –
(–) MT2
(–) MT2
+ IGT
Quadrant III
(–) IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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485
MAC997 Series
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
110
I T(RMS) , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
110
100
90
DC
80
180°
70
60
50
40
30
0
α
α
= CONDUCTION ANGLE
0.1
0.2
0.3
α
T
= 30°
60°
90°
100
90
80
70
60
50
40
30
20
α
α
= CONDUCTION ANGLE
0
0.05
0.1
0.15
α
DC
180°
T
= 30°
60°
90°
120°
120°
0.4
0.5
0.6
0.7
0.8
0.2
0.25
0.3
0.35
0.4
IT(RMS), RMS ON–STATE CURRENT (AMPS)
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. RMS Current Derating
P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
1.2
1.0
α
0.8
α
= CONDUCTION ANGLE
0.6
120°
α
DC
180°
6.0
4.0
TJ = 110°C
2.0
25°C
1.0
90°
0.2
0
ITM, INSTANTANEOUS ON-STATE CURRENT (AMP)
0.4
0.6
0.4
T
= 30°
0
0.1
0.2
0.3
0.4
0.5
60°
0.6
0.7
0.8
IT(RMS), RMS ON–STATE CURRENT (AMPS)
0.2
Figure 3. Power Dissipation
0.1
0.06
0.04
0.02
0.01
0.006
0.4
1.2
2.0
2.8
3.6
4.4
5.2
6.0
VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 4. On–State Characteristics
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486
MAC997 Series
R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
I TSM , PEAK SURGE CURRENT (AMPS)
10
Z JC(t) = R JC(t)
@
r(t)
0.1
Q
Q
5.0
3.0
2.0
TJ = 110°C
f = 60 Hz
CYCLE
Surge is preceded and followed by rated current.
1.0
1.0
2.0
3.0
5.0
10
30
50
100
0.01
0.1
1.0
10
100
1
S
103
1
S
104
t, TIME (ms)
NUMBER OF CYCLES
Figure 5. Transient Thermal Response
100
I GT , GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0
–40 –25
–10
5
20
35
50
65
80
95
110
Figure 6. Maximum Allowable Surge Current
Q4
Q3
Q2
Q1
10
Q4
Q3
Q2
1
Q1
0.3
–40 –25
–10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
100
10
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
IL , LATCHING CURRENT (mA)
10
Q2
IH , HOLDING CURRENT (mA)
MT2 Negative
1
MT2 Positive
Q4
1
Q1
Q3
0
–40 –25
–10
5
20
35
50
65
80
95
110
0.1
–40 –25
–10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Latching Current versus
Junction Temperature
Figure 10. Typical Holding Current versus
Junction Temperature
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Microcontroller MCU
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