MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MW4IC915/D
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Motorola’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage
structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N-CDMA and W-CDMA.
•
Typical GSM/GSM EDGE Performances: 26 Volts, I
DQ1
= 60 mA, I
DQ2
=
240 mA, 869-894 MHz and 921-960 MHz
Output Power — 3 Watts Avg.
Power Gain — 31 dB
Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = -65 dBc
Spectral Regrowth @ 600 kHz Offset = -83 dBc
EVM — 1.5%
•
Typical Performance: 860-960 MHz, 26 Volts
Output Power — 15 Watts CW
Power Gain — 30 dB
Efficiency — 44%
•
On Chip Matching (50 Ohm Input, >3 Ohm Output)
•
Integrated Temperature Compensation Capability with Enable/Disable
Function
•
Integrated ESD Protection
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz,
P
out
= 15 W CW, I
DQ1
= 90 mA, I
DQ2
= 240 mA
•
Can Be Bolted or Soldered through a Hole in the Circuit Board for
Maximum Thermal Performance
•
Also Available in Gull Wing for Surface Mount
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW4IC915MBR1
MW4IC915GMBR1
GSM/GSM EDGE,
N-CDMA, W-CDMA
860 - 960 MHz, 15 W, 26 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329-09
TO-272 WB-16
PLASTIC
MW4IC915MBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW4IC915GMBR1
PIN CONNECTIONS
V
DS1
RF
in
RF
out
/V
DS2
GND
NC
NC
V
DS1
NC
RF
in
V
GS1
V
GS2
Temperature Compensation
NC
V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/
V
DS2
Functional Block Diagram
13
12
NC
GND
(Top View)
REV 2
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC915MBR1 MW4IC915GMBR1
1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
GSM Application
(P
out
= 15 W CW)
GSM EDGE Application
(P
out
= 7.5 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
Symbol
R
θJC
1.48
Value
65
-0.5. +15
-65 to +175
175
Unit
Vdc
Vdc
°C
°C
THERMAL CHARACTERISTICS
Max
Unit
°C/W
1.59
Freescale Semiconductor, Inc...
CDMA Application
(P
out
= 3.75 W CW)
1.63
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22-A113
Rating
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
Drain Efficiency
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
Third Order Intermodulation Distortion
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
Input Return Loss
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
Symbol
G
ps
Min
29
Typ
31
Max
—
Unit
dB
TWO-TONE FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
η
29
31
—
%
IMD3
—
-40
-29
dBc
IRL
—
-15
-10
dB
(continued)
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS - continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Quiescent Current Accuracy over Temperature (-10 to 85°C)
at Nominal Value
Gain Flatness in 40 MHz Bandwidth @ P
out
= 3 W CW
(Characterize from 869-894 MHz and 920-960 MHz)
Deviation from Linear Phase in 40 MHz Bandwidth @ P
out
= 3 W CW
(Characterize from 869-894 MHz and 920-960 MHz)
Delay @ P
out
= 3 W CW
Insertion Phase Window @ P
out
= 3 W CW
Symbol
∆I
QT
G
F
Φ
Delay
Φ∆
Min
—
—
—
—
—
Typ
±5
0.2
±0.6
2.5
±15
Max
—
—
—
—
—
Unit
%
dB
°
ns
°
PERFORMANCE TESTS
(In Motorola Reference Board) V
DS
= 26 V, I
DQ1
= 60 mA, I
DQ2
= 240 mA
TYPICAL PERFORMANCE GSM/GSM EDGE
(In Motorola Reference Board) V
DS
= 26 V, I
DQ1
= 60 mA, I
DQ2
= 240 mA,
869-894 MHz and 921-960 MHz
Output Power at 1dB Compression Point
P1dB
G
ps
η
IRL
EVM
SR1
SR2
—
—
—
—
—
—
—
20
30
44
-15
1.5
-65
-83
—
—
—
—
—
—
—
Watts
dB
%
dB
%
dBc
dBc
Common-Source Amplifier Power Gain
(P
out
= 15 W CW)
Drain Efficiency
(P
out
= 15 W CW)
Input Return Loss
(P
out
= 15 W CW)
Error Vector Magnitude
(P
out
= 3 W Avg. including 0.6% rms source EVM)
Spectral Regrowth at 400 kHz Offset
(P
out
= 3 W Avg.)
Spectral Regrowth at 600 kHz Offset
(P
out
= 3 W Avg.)
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC915MBR1 MW4IC915GMBR1
3
Freescale Semiconductor, Inc.
L1
V
DS1
+
RF
INPUT
C1
Z1
R1
+
C6
V
GS2
R2
+
C9
C8
C7
C5
C4
C2
C3
1
2 NC
3 NC
4
5 NC
6
7 NC
8
9
10 NC
11
16
NC 15
+
C10
C11
C15
+
C14
V
DS2
14
Z2
Z3
C12
C13
Z4
M1
Z5
M2
Z6
M4
Z7
M3
Z8
C16
Z9
RF
OUTPUT
V
GS1
Temperature
Compensation
NC 13
12
Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
0.086″, 50
W
Microstrip
0.133″ x 0.236″ Microstrip
0.435″ x 0.283″ Microstrip
0.171″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.157″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.394″ x 0.088″ Microstrip
0.181″ x 0.088″ Microstrip
Taconic TLX8, 0.030″,
ε
r
= 2.55
Figure 1. Two-Tone 860-960 MHz Test Fixture Schematic
Table 1. Two-Tone 860-960 MHz Test Fixture Component Designations and Values
Designators
C1, C6, C9, C14
C2, C5, C8, C11
C3, C4, C7, C10, C16
C12, C13
C15
R1, R2
L1
M1, M2, M3, M4
Description
22
mF,
35 V Tantalum Chip Capacitors, AVX #TAJE226M035R
1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X
22 pF Chip Capacitors, B Case, ATC #100B220JCA500X
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X
10
mF
Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
10 kΩ, 1/4 W Chip Resistor (1206)
12.5 nH Inductor
0.283″, 90_ Mitered Microstrip Bends
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
Go to: www.freescale.com
Freescale Semiconductor, Inc.
C1
V
DS1
C2
C3
C10
L1
C12
C13
C5
C4
C7
C6
R1
C8
C9
V
GS2
R2
C16
C11
MW4IC915MB
Rev 0
V
DS2
C14
C15
Freescale Semiconductor, Inc...
V
GS1
Figure 2. Two-Tone 860-960 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC915MBR1 MW4IC915GMBR1
5
京公网安备 11010802033920号
EEWORLD
