OM130STC
RADIATION HARDENED POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE N-CHANNEL
100V, 10 Amp, N-Channel, Radiation Hardened
Power MOSFET In A Hermetic Metal Package
FEATURES
•
•
•
•
•
•
Rated As Radiation Hard
Avalanche Energy Rated
Isolated Hermetic Package
Low R
DS(on)
High Switching Speeds
Screened to TX, TXV And S Levels
DESCRIPTION
This N-Channel Power MOSFET product is in a hermetic package and features the
latest radiation hard power semiconductor. This semiconductor die is processed to
achieve hardened characteristics. Total dose hardness is available at 100K and
1000K rads with neutron hardness at 1E14 N/CM
2
. Dose rate hardness, without
current limiting, is to rates of 1E9 rads/sec, and with current limiting 2E12 rads/sec.
The heavy ion survival rate, from a single event drain burn out, is a linear energy
transfer (LET) of 35 at 80 Volts.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25°C
Drain Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain Gate Voltage (R
GS
= 20KW), V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Continuous Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.2 A
Continuous Drain Current, I
D
@ 100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.4 A
Pulsed Drain Current, I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 A
Max. Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 W
Max. Power Dissipation, P
D
@ 100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51W/°C
Operating Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C TO +150°C
Storage Temperature, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C TO +175°C
Lead Temperature - 1/16” from case for 10 sec . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
3.1
RAD HARDNESS RATING
T
C
= 25°C
CHARACTERISTIC
INITIAL
BV
DSS
R
DS(on)
V
GS
100V
.20W
2.0 - 4.0V
POST RADIATION - RADS
10K
100K
1MEG
100V
100V
95V
.20W
.20W
.28W
2.0 - 4.0V
2.0 - 4.0V
1.5 - 4.5V
3.1 - 13
4 11 R0
OM130STC
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM130STC (100V)
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Current
1
10.2
0.1
0.2
Min. Typ. Max. Units Test Conditions
100
2.0
4.0
± 100
0.25
1.0
V
V
nA
mA
mA
A
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
(T
C
= 25°C unless otherwise noted)
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.20
0.40
V
GS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 6 A,,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
680
340
115
25
65
35
38
S(W
)
V
DS
2 V
DS(on)
, I
D
= 6 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 50 V, I
D
@
6 A
R
g
= 12
W
, V
DS
= 10 V
(W )
A
A
V
V
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
V
SD
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
Diode Forward Voltage
1
Diode Forward
Voltage
1
Reverse Recovery Time
- 12
- 56
- 2.5
- 2.5
250
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -12 A, V
GS
= 0
T
C
= 25 C, I
S
= -12 A, V
GS
= 0
T
J
= 25 C, I
F
= -12A,
dl
F
/ds = 100 A/ms
3.1
t
rr
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
ORDERING INFORMATION
Omnirel Part Number
OM130S T C D S
Substrate Type
S = Insulated Standard
N = Non-Isolated
Screening Leve
M = Commercial
T = TX
S = Space
.150
.140
1 2 3
Package - TO-257AA
Feedthrough construction ceramic
Radiation Level - rads
D = 10K
R = 100K
H = 1Meg
.750
.500
.005
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.035
.025
.100 TYP.
.120 TYP.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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