BS250PSTZ datasheet, PDF - EEWORLD Datasheet

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BS250PSTZ: DescriptionSmall Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size48KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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BS250PSTZ Overview

Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3

BS250PSTZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	45 V
Maximum drain current (ID)	0.23 A
Maximum drain-source on-resistance	14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 SEPT 93

FEATURES

* 45 Volt V

DS

* R

DS(on)

=14Ω

BS250P

D

G

S

REFER TO ZVP2106A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

-45

E-Line

TO92 Compatible

VALUE

UNIT

V

mA

A

V

mW

°C

-230

-3

±

20

700

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source

Threshold Voltage

Gate Body Leakage

Zero Gate Voltage

Drain Current

SYMBOL

BV

DSS

V

GS(th)

I

GSS

I

DSS

MIN.

-45

-1

-3.5

-20

-500

14

150

TYP.

MAX.

UNIT

V

nA

Ω

CONDITIONS.

I

D

=-100

µ

A, V

GS

=0V

I

D

=-1mA, V

DS

=V

GS

VGS=-15V, V

DS

=0V

V

GS

=0V, V

DS

=-25V

V

GS

=-10V, I

D

=-200mA

V

DS

=-10V, I

D

=-200mA

Static Drain-Source

R

DS(on)

on-State Resistance (1)

Forward

g

fs

Transconductance (1)(2)

Input Capacitance (2)

Turn-On Time (2)(3)

Turn-Off Time (2)(3)

C

iss

t

(on)

t

(off)

mS

60

20

pF

ns

V

GS

=0V, V

DS

=-10V

f=1MHz

V

DD

≈

-25V, I

D

=-500mA

(1) Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2% (2) Sample test

(3) Switching times measured with a 50

Ω

source impedance and <5ns rise time on a pulse generator

3-28

BS250PSTZ Related Products

	BS250PSTZ	BS250PSTOB
Description	Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	not_compliant
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	45 V	45 V
Maximum drain current (ID)	0.23 A	0.23 A
Maximum drain-source on-resistance	14 Ω	14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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