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D1213UKG4

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,4 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

D1213UKG4 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN

D1213UKG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionDBC1, 8 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-XDFP-F8
JESD-609 codee4
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D1213UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
D
B
E
8
1
7
6
3
4
2
C
A
F
5
Q
O
N
M
J
K
L
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
6W – 7.2V – 500MHz
SINGLE ENDED
I
P
H
G
DBC1 Package
PIN 1 Source
PIN 2 Drain
PIN 3 Drain
PIN 4 Source
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
Tol.
.003
.003
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
PIN 5 Source
PIN 6 Gate
PIN 7 Gate
PIN 8 Source
Tol.
0.08
0.08
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
Inches
.255
.030
45
°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
58W
40V
±20V
20A
–65 to 150°C
200°C
Prelim. 7/99

D1213UKG4 Related Products

D1213UKG4 D1213UK
Description RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN
Is it Rohs certified? conform to conform to
package instruction DBC1, 8 PIN DBC1, 8 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-XDFP-F8 R-XDFP-F8
JESD-609 code e4 e4
Number of components 1 1
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface GOLD GOLD
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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