ZTX789A datasheet, PDF - EEWORLD Datasheet

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ZTX789A: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size78KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX789A Overview

Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, E-LINE PACKAGE-3

ZTX789A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	E-LINE PACKAGE-3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.45 V
Base Number Matches	1

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PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 2 APRIL 94

FEATURES

* 25 Volt V

CEO

* Gain of 200 at I

C

=2 Amps

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Battery powered circuits

* Motor drivers

ZTX789A

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation

at T

amb

=25°C

derate above 25°C

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:T

stg

-25

-5

-8

-3

1.5

1

5.7

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

mW/°C

°C

Operating and Storage Temperature Range

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

300

250

200

100

3-276

-0.8

800

MIN.

-25

-5

-0.1

-0.25

-0.45

-0.5

-1.0

TYP.

MAX.

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-15V

V

EB

=-4V

I

C

=-1A, I

B

=-10mA*

I

C

=-2A, I

B

=-20mA*

I

C

=-3A, I

B

=-100mA*

I

C

=-1A, I

B

=-10mA*

IC=-1A, V

CE

=-2V*

I

C

=-10mA, V

CE

=-2V

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-6A, V

CE

=-2V*

V

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