MITSUBISHI LASER DIODES
ML9xx19 SERIES
Notice: Some parametric limits are subject to change
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
NAME
ML925B19F / ML920J19S / ML925J19F
FEATURES
·
λ/4
shifted grating structure
· Wide temperature range operation (0
o
C to 70
o
C)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
DESCRIPTION
ML9XX19 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4
shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx19 can
operate in the wide temperature range from 0
o
C to 70
o
C without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
APPLICATION
· 2.5Gbps long-haul transmission
· Coarse WDM application
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
IF
VRL
IFD
VRD
Tc
Tstg
P arameter
Output power
Laser forward current
Laser reverse voltage
PD forward current
PD reverse voltage
Operation temperature
Storage temperature
Conditions
CW
-
-
-
-
-
-
Ratings
6
200
2
2
20
0 to +70
-40 to +100
Unit
mW
mA
V
mA
V
o
C
o
C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25
o
C)
Limits
Symbol
P arameter
CW
Ith
Threshold current
CW, Tc=70
o
C
CW, Po=5mW <*1>
Iop
Vop
η
λp
SMSR
Side mode suppression ratio(RF)
θ//
θ⊥
fr
tr , tf
Im
Id
Ct
2.48832Gbps, Ib=Ith, Ipp=40mA
---
---
---
---
---
0.1
---
---
45
25
30
11
80
---
---
10
---
---
deg.
(perpendicular) <*6> CW, Po=5mW
Resonance frequency
Rise and Fall time
Monitoring current (PD)
Dark current (PD)
Capacitance (PD)
2.48832Gbps, Ib=Ith, Ipp=40mA
2.48832Gbps, Ib=Ith, Ipp=40mA
20%-80%
CW, Po=5mW, VRD=1V, RL=10Ω
<∗ 7 >
VRD=5V
VRD=5V, f=1MHz
---
---
120
1.5
0.1
20
GHz
psec
mA
µ
A
pF
dB
Beam divergence angle (parallel) <*6> CW, Po=5mW
Operation current
Operating voltage
Slope efficiency
CW, PL=5mW <*3>
P eak wavelength
Side mode suppression ratio
CW, Po=5mW <*1>
CW, Po=5mW, Tc=0 to 70
o
C <*1>
35
0.13
0.18
< *4,*5 >
45
---
---
nm
dB
CW, Po=5mW, Tc=70
o
C <*1>
CW, Po=5mW <*1>
CW, Po=5mW <*2>
Conditions
Min.
---
---
---
---
---
0.15
Typ.
12
28
40
70
1.1
0.20
Max.
18
mA
40
55
mA
80
1.5
---
mW/mA
V
Unit
<*1> PL=5mW is applied to ML925J19F < *2 > Applied to ML925B19F and ML920J19S
< *3 > Applied to ML925J19F <*6> Beam divergence is not applied to ML925J19F
MITSUBISHI
ELECTRIC
May. 2003
MITSUBISHI LASER DIODES
ML9xx19 SERIES
Notice: Some parametric limits are subject to change
< *4 >Peak Wavelength
Limits
Type
Symbol Test Condition
Min.
ML925B19F-01 / ML920J19S-01 / ML925J19F-01
ML925B19F-04 / ML920J19S-04 / ML925J19F-04
ML925B19F-05 / ML920J19S-05 / ML925J19F-05
ML925B19F-06 / ML920J19S-06 / ML925J19F-06
ML925B19F-07 / ML920J19S-07 / ML925J19F-07
ML925B19F-08 / ML920J19S-08 / ML925J19F-08
ML925B19F-09 / ML920J19S-09 / ML925J19F-09
ML925B19F-10 / ML920J19S-10 / ML925J19F-10
ML925B19F-11 / ML920J19S-11 / ML925J19F-11
λp
CW, Po=5mW
Tc=25
o
C
< *1>
CW, Po=5mW
Tc=0 to 70
o
C
< *1>
1530
1467
1487
1507
1527
1547
1567
1587
1607
Typ.
1550
1470
1490
1510
1530
1550
1570
1590
1610
Max.
1570
1473
1493
1513
1533
1553
1573
1593
1613
nm
Unit
2.5Gbps InGaAsP DFB LASER DIODE
< *5 >Peak Wavelength
Limits
Type
ML925B19F-12 / ML920J19S-12 / ML925J19F-12
ML925B19F-13 / ML920J19S-13 / ML925J19F-13
ML925B19F-14 / ML920J19S-14 / ML925J19F-14
ML925B19F-15 / ML920J19S-15 / ML925J19F-15
ML925B19F-16 / ML920J19S-16 / ML925J19F-16
ML925B19F-17 / ML920J19S-17 / ML925J19F-17
ML925B19F-18 / ML920J19S-18 / ML925J19F-18
ML925B19F-19 / ML920J19S-19 / ML925J19F-19
λp
CW, Po=5mW
Tc=25
o
C
< *1>
Symbol Test Condition
Min.
1468
1488
1508
1528
1548
1568
1588
1608
Typ.
1470
1490
1510
1530
1550
1570
1590
1610
Max.
1472
1492
1512
1532
nm
1552
1572
1592
1612
Unit
MITSUBISHI
ELECTRIC
May. 2003
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