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ML920J19S-15

Description
Laser Diode, 1530nm
CategoryLED optoelectronic/LED    photoelectric   
File Size75KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

ML920J19S-15 Overview

Laser Diode, 1530nm

ML920J19S-15 Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknown
Maximum forward current0.2 A
Maximum forward voltage1.5 V
Installation featuresTHROUGH HOLE MOUNT
Maximum operating temperature70 °C
Minimum operating temperature
Optoelectronic device typesLASER DIODE
peak wavelength1530 nm
Maximum response time1.2e-10 s
Semiconductor materialInGaAsP
surface mountNO
MITSUBISHI LASER DIODES
ML9xx19 SERIES
Notice: Some parametric limits are subject to change
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
NAME
ML925B19F / ML920J19S / ML925J19F
FEATURES
·
λ/4
shifted grating structure
· Wide temperature range operation (0
o
C to 70
o
C)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
DESCRIPTION
ML9XX19 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4
shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx19 can
operate in the wide temperature range from 0
o
C to 70
o
C without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
APPLICATION
· 2.5Gbps long-haul transmission
· Coarse WDM application
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
IF
VRL
IFD
VRD
Tc
Tstg
P arameter
Output power
Laser forward current
Laser reverse voltage
PD forward current
PD reverse voltage
Operation temperature
Storage temperature
Conditions
CW
-
-
-
-
-
-
Ratings
6
200
2
2
20
0 to +70
-40 to +100
Unit
mW
mA
V
mA
V
o
C
o
C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25
o
C)
Limits
Symbol
P arameter
CW
Ith
Threshold current
CW, Tc=70
o
C
CW, Po=5mW <*1>
Iop
Vop
η
λp
SMSR
Side mode suppression ratio(RF)
θ//
θ⊥
fr
tr , tf
Im
Id
Ct
2.48832Gbps, Ib=Ith, Ipp=40mA
---
---
---
---
---
0.1
---
---
45
25
30
11
80
---
---
10
---
---
deg.
(perpendicular) <*6> CW, Po=5mW
Resonance frequency
Rise and Fall time
Monitoring current (PD)
Dark current (PD)
Capacitance (PD)
2.48832Gbps, Ib=Ith, Ipp=40mA
2.48832Gbps, Ib=Ith, Ipp=40mA
20%-80%
CW, Po=5mW, VRD=1V, RL=10Ω
<∗ 7 >
VRD=5V
VRD=5V, f=1MHz
---
---
120
1.5
0.1
20
GHz
psec
mA
µ
A
pF
dB
Beam divergence angle (parallel) <*6> CW, Po=5mW
Operation current
Operating voltage
Slope efficiency
CW, PL=5mW <*3>
P eak wavelength
Side mode suppression ratio
CW, Po=5mW <*1>
CW, Po=5mW, Tc=0 to 70
o
C <*1>
35
0.13
0.18
< *4,*5 >
45
---
---
nm
dB
CW, Po=5mW, Tc=70
o
C <*1>
CW, Po=5mW <*1>
CW, Po=5mW <*2>
Conditions
Min.
---
---
---
---
---
0.15
Typ.
12
28
40
70
1.1
0.20
Max.
18
mA
40
55
mA
80
1.5
---
mW/mA
V
Unit
<*1> PL=5mW is applied to ML925J19F < *2 > Applied to ML925B19F and ML920J19S
< *3 > Applied to ML925J19F <*6> Beam divergence is not applied to ML925J19F
MITSUBISHI
ELECTRIC
May. 2003

ML920J19S-15 Related Products

ML920J19S-15 ML925J19F-07 ML920J19S-18 ML925J19F-18
Description Laser Diode, 1530nm Laser Diode, 1530nm Laser Diode, 1590nm Laser Diode, 1590nm
Reach Compliance Code unknown unknow unknown unknown
Maximum forward current 0.2 A 0.2 A 0.2 A 0.2 A
Maximum forward voltage 1.5 V 1.5 V 1.5 V 1.5 V
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
Optoelectronic device types LASER DIODE LASER DIODE LASER DIODE LASER DIODE
peak wavelength 1530 nm 1530 nm 1590 nm 1590 nm
Maximum response time 1.2e-10 s 1.2e-10 s 1.2e-10 s 1.2e-10 s
Semiconductor material InGaAsP InGaAsP InGaAsP InGaAsP
surface mount NO NO NO NO
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