SILICON POWER
NPN TRANSISTOR
BUL54A-TO5
•
•
•
•
•
Advanced Distributed Base design
High Voltage
Fast Switching
High Energy Rating
Screening Options Available
Features:
•
•
•
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and
energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PTOT
TJ
Tstg
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
c
= 0)
Continuous Collector Current
Tc = 25°C
Total Power Dissipation at
Operating Junction Temperature Range
Storage Temperature Range
1000V
500V
10V
4A
20W
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max
6.25
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 5977
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON POWER
NPN TRANSISTOR
BUL54A-TO5
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
ICBO
ICEO
IEBO
V(BR)CEO
(1)
Parameters
Collector-Base Cut-Off Current
Collector-Emitter Cut- off current
Emitter-Base Cut-Off Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Test Conditions
VCB = 1000V
TC = 125°C
IB = 0
VEB = 9V
IC = 0
IC = 10mA
IC = 100µA
IE = 100µA
IC = 100mA
IB =20mA
IB =0.1A
IB = 0.2A
IB = 0.1A
IB = 0.2A
VCE = 5V
VCE = 5V
VCE = 1.0V
TC = 125°C
TC = 125°C
VCE = 500V
Min
Typ
Max
10
100
100
10
100
Units
µA
500
1000
10
0.05
0.15
0.3
0.8
0.9
20
12
5
50
15
8
5
0.1
0.2
0.5
1.0
1.1
V
V(BR)CBO
V(BR)EBO
(1)
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.5A
IC = 1.0A
VBE(sat)
(1)
Base-Emitter Saturation Voltage
IC = 0.5A
IC = 1.0A
IC = 0.1A
hFE
(1)
Forward-current transfer ratio
IC = 0.5A
IC = 1.0A
DYNAMIC CHARACTERISTICS
fT
Cobo
Transition Frequency
Output Capacitance
IC = 0.2A
VCB = 20V
VCE = 4V
f = 1.0MHz
20
20
MHz
pF
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 5977
Issue 2
Page 2 of 3
SILICON POWER
NPN TRANSISTOR
BUL54A-TO5
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
38.00
(1.5)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO-5 (TO-205AA)
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 5977
Issue 2
Page 3 of 3
TI Technology Forum
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