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FUF5406

Description
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size3MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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FUF5406 Overview

3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

FUF5400 THRU FUF5408
Glass Passivated Ultrafast Recovery Rectifier
50V-1000V
3.0A
FEATURES
PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY
FLAMMABILITY CLASSIFICATION 94V-0
ULTRA FAST RECOVERY TIMES FOR HIGH EFFICIENCY
LOW FORWARD VOLTAGE, HIGH CURRENT CAPABILITY
LOW LEAKAGE
HIGH SURGE CAPABILITY
HIGH TEMPERATURE SOLDERING GUARANTEED:
260°C 0.375” (9.5mm) LEAD LENGTHS FOR 10 SECONDS AT
5 LBS.(2.3KG)TENSION
Mechanical Data
CASE: MOLDED PLASTIC, DO41, DIMENSIONS
IN INCHES AND (MILLIMETERS)
TERMINALS: AXIAL LEADS SOLDERABLE PER MIL-STD-
202, METHOD 208
POLARITY: COLOR BAND DENOTES CATHODE END
MOUNTING POSITION: ANY
WEIGHT: 0.34 GRAMS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings
FUF 5400 FUF 5401 FUF 5402 FUF 5404 FUF 5406 FUF 5407 FUF 5408
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
t
rr
C
j
T
j
T
stg
E
RSM
Peak Recurrent reverse voltage (V)
Maximum RMS voltage
Maximum DC blocking voltage
Forward current at Tamb = 55 °C
Recurrent peak forward surge current
8.3 ms. peak forward surge current
(Jedec Method)
50
35
50
100
70
100
200
140
200
400
280
400
3A
30 A
150 A
600
420
600
800
560
800
1000
700
1000
Max. reverse recovery time from
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
Typical Junction Capacitance at 1 MHz
and reverse voltaje of 4V
DC
Operating temperature range
Storage temperature range
Maximum non repetitive peak
reverse avalanche energy.
I
R
= 1A ; T
J
= 25 ºC
Max. forward voltage drop at I
F
= 3 A
Max. reverse current at V
RRM
at 25 ºC
Max. thermal resistance ( l = 10 mm.)
50 ns
45 pF
– 65 to + 150 °C
– 65 to + 150 °C
20 mJ
75 ns
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
thj-a
1.3 V
5µA
30 °C/W
1.7 V
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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FUF5406 FUF5400 FUF5401 FUF5402 FUF5404 FUF5407 FUF5408
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