ZVN0540ASTOA datasheet, PDF - EEWORLD Datasheet

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ZVN0540ASTOA: DescriptionSmall Signal Field-Effect Transistor, 0.09A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVN0540ASTOA Overview

Small Signal Field-Effect Transistor, 0.09A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN0540ASTOA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	0.09 A
Maximum drain-source on-resistance	50 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

FEATURES

* 400 Volt V

* R

DS(on)

=50Ω

ZVN0540A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

E-Line

TO92 Compatible

VALUE

400

600

UNIT

°C

700

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

100

3-356

150

400

MAX. UNIT CONDITIONS.

=1mA, V

=0V

ID=1mA, V

= V

20V, V

=0V

=400 V, V

=320 V, V

=0V,

T=125°C

(2)

=25 V, V

=10V

=10V,I

=100mA

=25V,I

=100mA

Ω

Forward Transconductance(1)(2g

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

iss

oss

=25 V, V

=0V, f=1MHz

Reverse Transfer Capacitance C

rss

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

d(on)

d(off)

≈

25V, I

=100mA

(

ZVN0540ASTOA Related Products

	ZVN0540ASTOA	ZVN0540ASTOB	ZVN0540ASTZ
Description	Small Signal Field-Effect Transistor, 0.09A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.09A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.09A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code	unknown	unknown	not_compliant
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	400 V	400 V	400 V
Maximum drain current (ID)	0.09 A	0.09 A	0.09 A
Maximum drain-source on-resistance	50 Ω	50 Ω	50 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	-

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