FMMTH10TC datasheet, PDF - EEWORLD Datasheet

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FMMTH10TC: DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size111KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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FMMTH10TC Overview

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

FMMTH10TC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	650 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

RF TRANSISTOR

ISSUE 2 NOVEMBER 1995

FEATURES

* High f

T

=650MHz

* Maximum capacitance 0.7pF

* Low noise < 5dB at 500MHz

FMMTH10

E

C

B

PARTMARKING DETAIL

3EZ

SOT23

SYMBOL

V

CES

V

CEO

V

EBO

I

C

I

CM

P

tot

T

j

:T

stg

MAX.

UNIT

V

100

0.5

Typ.

0.45

0.65

0.95

60

650

0.7

9

Typ.

3

5

MHz

pF

ps

dB

nA

V

pF

V

VALUE

30

25

3

25

50

330

-55 to +150

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10

µ

A, I

C

=0

V

CB

=25V, I

E

=0

V

EB

=2V,I

C

=0

I

C

=4mA, I

B

=0.4mA

V

CB

=10V, I

E

=0

f=1MHz

I

C

=4mA, V

CE

=10V

I

C

=4mA, V

CE

=10V*

I

C

=4mA, V

CE

=10V, f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

I

C

=4mA, V

CB

=10V, f=31.8MHz

I

C

=2mA, V

CE

=5V

f=500MHz,

UNIT

V

mA

mW

°C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

MIN.

30

25

3

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

Collector-Emitter Saturation V

CE(sat)

Voltage

Common Base Feedback

Capacitance

Base-Emitter Turn-On

Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

C

rb

V

BE(on)

h

FE

f

T

Collector Base Capacitance C

cb

Collector Base Time Constant r

b

C

c

Noise Figure

N

f

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

3 - 181

FMMTH10TC Related Products

	FMMTH10TC	FMMTH10TA
Description	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.025 A	0.025 A
Collector-based maximum capacity	0.7 pF	0.7 pF
Collector-emitter maximum voltage	25 V	25 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	60
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	650 MHz	650 MHz
VCEsat-Max	0.5 V	0.5 V

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