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BAT83

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size159KB,1 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

BAT83 Overview

Rectifier Diode,

BAT83 Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
Base Number Matches1
BL
FEATURES
BAT83
VOLTAGE RANGE: 60 V
CURRENT: 30 mA
SMALL SIGNAL SCHOTTKY DIODE
For general purpose applications
This diodes features very low turn-on voltage
and fast switching. This devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
DO - 34
MECHANICAL DATA
Case:JEDEC DO--34,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.093 gram
Dimensions in millimeters
ABSOLUTE RATINGS
Symbols
Continuous reverse voltage
Forw ard continuous current
@
T
A
=25
<=0.5,T
A
=25
Value
60
30
150
500
125
c-55
---+ 150
UNITS
V
mA
mA
mA
V
R
I
F
I
FRM
I
FSM
T
J
T
STG
Repetitive peak forw ard current @ tp<1s,
Non-repetitive peak forward current @ tp<10ms
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS
Symbols
Forw ard voltage
Pulse test tp<300 s,
@ I
F
=0.1mA
@ I
F
=1mA
@ I
F
=15mA
Leakage current V
R
=60V
Junction capacitance at V
R
=1V,f=1MHz
Thermal resistance junction to ambient air
<2%
Min.
Typ.
Max.
UNITS
V
F
0.33
0.41
1.0
V
V
V
A
pF
/W
I
R
C
J
R
θJA
0.2
1.6
320
1)
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
www.gmesemi.com
Document Number BAT83
BL
GALAXY ELECTRICAL
1.

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