BFJ17 datasheet, PDF - EEWORLD Datasheet

BFJ17: DescriptionInsulated Gate Bipolar Transistor, 65A I(C), 1000V V(BR)CES, N-Channel, TO-247AD; CategoryDiscrete semiconductor The transistor; File Size50KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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Insulated Gate Bipolar Transistor, 65A I(C), 1000V V(BR)CES, N-Channel, TO-247AD

Parameter Name	Attribute value
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Other features	LOW CONDUCTION LOSS
Maximum collector current (IC)	65 A
Collector-emitter maximum voltage	1000 V
Configuration	SINGLE
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	260 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
VCEsat-Max	2.8 V
Base Number Matches	1

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