LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistor
The LMBT3904DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
•
hFE, 100–300
•
Low VCE(sat),
≤
0.4 V
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
•
Device Marking: LMBT3904DW1T1G = MA
Featrues
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3904DW1T1G
S-LMBT3904DW1T1G
6
5
4
1
2
3
SOT-363
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
ORDERING INFORMATION
Device
LMBT3904DW1T1G
S-LMBT3904DW1T1G
LMBT3904DW1T3G
S-LMBT3904DW1T3G
Marking
Shipping
3000 Units/Reel
10000 Units/Reel
MA
MA
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to
Ambient
Junction and Storage
Temperature Range
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1.
recommended footprint.
Rev.A 1/7
LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1G ;S-LMBT3904DW1T1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10
mAdc,
IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10
mAdc,
IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
IBL
–
ICEX
–
50
50
nAdc
–
nAdc
–
Vdc
–
Vdc
Vdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
hFE
40
70
100
60
30
VCE(sat)
–
–
VBE(sat)
0.65
–
0.85
0.95
0.2
0.3
Vdc
–
–
300
–
–
Vdc
–
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width
≤
300
µs;
Duty Cycle
≤2.0%.
fT
300
Cobo
–
Cibo
–
8.0
4.0
pF
–
pF
MHz
Rev.A 2/7
LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1G ;S-LMBT3904DW1T1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100
mAdc,
RS = 1.0 k
Ω,
f = 1.0 kHz)
Symbol
hie
1.0
hre
0.5
hfe
100
hoe
1.0
NF
–
5.0
40
dB
400
mmhos
8.0
–
10
X 10–4
Min
Max
Unit
k
Ω
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 3.0 Vdc, VBE = –0.5 Vdc)
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc)
(IB1 = IB2 = 1.0 mAdc)
td
tr
ts
tf
–
–
–
–
35
35
200
50
ns
ns
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 k
275
10 < t1 < 500
ms
t1
+3 V
+10.9 V
275
10 k
1N916
Cs < 4 pF*
DUTY CYCLE = 2%
0
-0.5 V
< 1 ns
Cs < 4 pF*
-9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
Rev.A 3/7
LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1G ;S-LMBT3904DW1T1G
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
Cibo
5000
3000
2000
1000
700
500
300
200
100
70
50
QT
QA
VCC = 40 V
IC/IB = 10
3.0
2.0
Cobo
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
500
300
200
100
70
50
30
20
10
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
10
200
7
5
1.0
2.0 3.0
Figure 4. Charge Data
IC/IB = 10
VCC = 40 V
IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V
40 V
15 V
2.0 V
50 70 100
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 20
IC/IB = 10
500
300
200
t f , FALL TIME (ns)
100
70
50
30
20
10
7
5
1.0
2.0 3.0
Figure 6. Rise Time
t′s = ts - 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 20
IC/IB = 10
IC/IB = 10
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Rev.A 4/7
LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1G ;S-LMBT3904DW1T1G
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 200
W
IC = 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
IC = 0.5 mA
SOURCE RESISTANCE = 1.0 k
IC = 50
mA
14
12
10
8
6
4
2
4.0
10
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f = 1.0 kHz
IC = 1.0 mA
IC = 0.5 mA
IC = 50
mA
IC = 100
mA
SOURCE RESISTANCE = 500
W
IC = 100
mA
0.2
0.4
1.0
2.0
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure
Figure 10. Noise Figure
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
5.0
10
100
50
20
10
5
2
1
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
h fe , CURRENT GAIN
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
h
re
, VOLTAGE FEEDBACK RATIO (x 10
-4
)
20
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.2
10
7.0
5.0
3.0
2.0
Figure 12. Output Admittance
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
Rev.A 5/7
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