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Datasheet> All Categories > Discrete semiconductor> diode> RM3V3
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RM3V3

Description
Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size172KB，9 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

RM3V3 Overview

Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon,

RM3V3 Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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Download Datasheet
General-purpose Diodes
Rectifier Diodes
s
Surface-mount Type
Absolute Maximum Ratings
Type No.
V
RM
(V)
200
400
200
400
1.0
45
I
F (AV)
(A)
I
FSM
(A)
Tj
Tstg
(ºC)
SFPM-52
-54
SFPM-62
-64
0.9
30
–40 to +150
0.98
V
F
(V)
max
1.00
1.0
10
1
Condition
(Ta=25ºC)
Electrical Characteristics
I
R
(µA)
max
RM 4Y
4Z
4
4A
4B
4C
100
200
400
600
800
1000
600
3.2
350
0.92
3.5
150
3.0
–40 to +150
0.97
200
0.95
3.0
Fig.
No.
Type No.
V
RM
(V)
Absolute Maximum Ratings
I
F (AV)
(A)
I
FSM
(A)
Tj
Tstg
(ºC)
(Ta=25ºC)
Electrical Characteristics
V
F
I
R
Condition
(V)
(µA)
I
F
max
max
(A)
Fig.
No.
I
F
(A)
10
8
s
Axial Type
Absolute Maximum Ratings
Type No.
V
RM
(V)
200
400
600
200
400
600
100
200
400
600
800
1000
400
600
800
200
400
600
800
1000
600
800
1000
200
400
600
800
200
400
600
800
1000
200
400
600
800
1000
400
600
800
1000
2.0
2.5
150
–40 to +150
0.95
2.5
1.2
80
–40 to +150
0.92
1.5
1.2
100
–40 to +150
0.91
1.5
1.2
150
1.5
120
–40 to +150
0.91
1.5
1.2
100
–40 to +150
0.92
1.5
0.8
40
1.0
50
–40 to +150
1.20
0.95
1.0
1.2
80
–40 to +150
0.92
1.2
1.0
45
–40 to +150
0.97
1.0
1.0
45
–40 to +150
0.97
1.0
1.0
35
–40 to +150
0.98
1.0
I
F (AV)
(A)
I
FSM
(A)
Tj
Tstg
(ºC)
AM01Z
01
01A
EM01Z
01
01A
EM 1Y
1Z
1
1A
1B
1C
EM 2
2A
2B
RM 1Z
1
1A
1B
1C
RM 11A
11B
11C
RM 10Z
10
10A
10B
RM 2Z
2
2A
2B
2C
RO 2Z
2
2A
2B
2C
RM 3
3A
3B
3C
V
F
(V)
max
Condition
(Ta=25ºC)
Electrical Characteristics
I
R
(µA)
max
Fig.
No.
4AM
I
F
(A)
s
Center-tap Type
Absolute Maximum Ratings
Type No.
V
RM
(V)
200
400
600
100
200
400
600
20.0
120
–40 to +150
1.1
10.0
10.0
100
–40 to +150
1.1
5.0
I
F (AV)
(A)
I
FSM
(A)
Tj
Tstg
(ºC)
FMM-22S,R
V
F
Condition
(V)
I
F
max. per
(A)
chip
(Ta=25ºC)
Electrical Characteristics
I
R
(µA)
max. per
chip
10
2
Fig.
No.
10
3
-24S,R
-26S,R
FMM-31S,R
-32S,R
-34S,R
-36S,R
10
9
10
10
35
10
4
5
5
10
10
10
6
10
10
7
89

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Shortcut:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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