SI4431DY datasheet, PDF - EEWORLD Datasheet

SI4431DY: DescriptionSmall Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size73KB，4 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	5.8 A
Maximum drain-source on-resistance	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	2.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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