ZVN1409ASTOB datasheet, PDF - EEWORLD Datasheet

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ZVN1409ASTOB: DescriptionSmall Signal Field-Effect Transistor, 0.01A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size80KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVN1409ASTOB Overview

Small Signal Field-Effect Transistor, 0.01A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN1409ASTOB Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	90 V
Maximum drain current (ID)	0.01 A
Maximum drain-source on-resistance	250 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 90 Volt V

* Low input capacitance

* Fast switching

ZVN1409A

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

VALUE

625

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Breakdown

Voltage

Gate Body Leakage

Zero Gate Voltage Drain

Current

On State Drain Current (1)

Static Drain Source On State

Resistance (1)

SYMBOL

DSS

GS(th)

GSS

DSS

MIN.

0.8

2.4

100

MAX.

UNIT

CONDITIONS.

=0.1mA, V

=0V

ID=0.1mA, V

= V

=± 20V, V

=0V

=90V, V

=0V

=72V, V

=0V,

T=125°C

=25 V, V

=10V

=10V,I

=5mA

=25V,I

=10mA

µA

100 (2)

µA

250

6.5

0.65

0.3

0.5

0.35

0.5

Ω

D(on)

DS(on)

Forward Transconductance (1)( g

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)(4)

Rise Time (2)(3)(4)

Turn-Off Delay Time (2)(3)(4)

Fall Time (2)(3)(4)

iss

oss

rss

d(on)

d(off)

=25 V, V

=0V

f=1MHz

≈25V,

=5mA

3-358

(

ZVN1409ASTOB Related Products

	ZVN1409ASTOB	ZVN1409ASTOA
Description	Small Signal Field-Effect Transistor, 0.01A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.01A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	90 V	90 V
Maximum drain current (ID)	0.01 A	0.01 A
Maximum drain-source on-resistance	250 Ω	250 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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