ZVC2106E datasheet, PDF - EEWORLD Datasheet

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ZVC2106E: DescriptionPower Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14; CategoryDiscrete semiconductor The transistor; File Size82KB，3 Pages; ManufacturerDiodes Incorporated

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ZVC2106E Overview

Power Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14

ZVC2106E Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	IN-LINE, R-PDIP-T14
Contacts	14
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)	3 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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ZVC2106E Related Products

	ZVC2106E	FF2221J	FF2484J	FF2906E	FF2906J	FF2484E
Description	Power Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14	Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 14 Pin, PLASTIC, DIP-14	Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, PLASTIC, DIP-14
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14
Contacts	14	14	14	14	14	14
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS
JESD-30 code	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	4	4	4	4	4	4
Number of terminals	14	14	14	14	14	14
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	235	235	235	235	235	235
Polarity/channel type	N-CHANNEL AND P-CHANNEL	NPN	NPN	PNP	PNP	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1
Maker	-	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Maximum collector current (IC)	-	0.6 A	0.1 A	0.6 A	0.6 A	0.1 A
Collector-emitter maximum voltage	-	40 V	40 V	40 V	40 V	40 V
Minimum DC current gain (hFE)	-	40	300	40	40	300
Nominal transition frequency (fT)	-	200 MHz	175 MHz	200 MHz	200 MHz	175 MHz

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