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30N6S2

Description
45 A, 600 V, N-CHANNEL IGBT, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size190KB,11 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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30N6S2 Overview

45 A, 600 V, N-CHANNEL IGBT, TO-220AB

30N6S2 Parametric

Parameter NameAttribute value
Number of terminals3
Rated off time163 ns
Maximum collector current45 A
Maximum Collector-Emitter Voltage600 V
Processing package descriptionTO-220AB, 3 PIN
Lead-freeYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Channel typeN-CHANNEL
Transistor typeINSULATED GATE BIPOLAR
Rated on time28 ns
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
July 2001
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125
o
C
• Low Gate Charge . . . . . . . . . 23nC at V
GE
= 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
JEDEC STYLE TO-247
Symbol
E
JEDEC STYLE TO-220AB
JEDEC STYLE TO-263AB
C
C
G
E
C
G
G
E
C
G
E
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
T
STG
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 20A, L = 1.3mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Ratings
600
45
20
108
±20
±30
60A at 600V
150
167
1.33
-55 to 150
-55 to 150
mJ
W
W/°C
°C
°C
Units
V
A
A
A
V
V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A

30N6S2 Related Products

30N6S2 FGB30N6S2 FGH30N6S2 FGP30N6S2 FGH30N6S2_01
Description 45 A, 600 V, N-CHANNEL IGBT, TO-220AB 45 A, 600 V, N-CHANNEL IGBT, TO-220AB 45 A, 600 V, N-CHANNEL IGBT, TO-220AB 45 A, 600 V, N-CHANNEL IGBT, TO-220AB 45 A, 600 V, N-CHANNEL IGBT, TO-220AB
Number of terminals 3 2 3 3 3
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1 1 1
transistor applications POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? - conform to conform to conform to -
Maker - Fairchild Fairchild Fairchild -
Parts packaging code - D2PAK TO-247 TO-220AB -
package instruction - PLASTIC, D2PAK-3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Contacts - 3 3 3 -
Reach Compliance Code - _compli compli unknow -
Other features - LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS -
Maximum collector current (IC) - 45 A 45 A 45 A -
Collector-emitter maximum voltage - 600 V 600 V 600 V -
Configuration - SINGLE SINGLE SINGLE -
Maximum landing time (tf) - 100 ns 100 ns 100 ns -
Gate emitter threshold voltage maximum - 5 V 5 V 5 V -
Gate-emitter maximum voltage - 20 V 20 V 20 V -
JEDEC-95 code - TO-263AB TO-247 TO-220AB -
JESD-30 code - R-PSSO-G2 R-PSFM-T3 R-PSFM-T3 -
JESD-609 code - e3 e3 e3 -
Maximum operating temperature - 150 °C 150 °C 150 °C -
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) - 260 NOT APPLICABLE NOT APPLICABLE -
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) - 167 W 167 W 167 W -
Certification status - Not Qualified Not Qualified Not Qualified -
surface mount - YES NO NO -
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE -
Nominal off time (toff) - 163 ns 163 ns 163 ns -
Nominal on time (ton) - 28 ns 28 ns 28 ns -
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