TSOP581.., TSOP583..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
FEATURES
• Low supply current
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against EMI
• Supply voltage: 2.7 V to 5.5 V
• Suitable for short bursts: burst length
≥
6
carrier cycles
• Improved immunity against ambient light
• Insensitive to supply voltage ripple and noise
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
19026
MECHANICAL DATA
Pinning
1 = OUT, 2 = GND, 3 = V
S
DESCRIPTION
The TSOP581.., TSOP583.. series are miniaturized
receiversfor infrared remote control systems. A PIN diode
and a preamplifier are assembled on a lead frame, the epoxy
package acts as an IR filter.
The demodulated output signal can directly be decoded by
a microprocessor. The main benefit of the TSOP581.. is the
compatibility to all IR remote control data formats. The
TSOP583.. is optimized to better suppress spurious pulses
from fluorescent lamps, LCD TVs or plasma displays.
This component has not been qualified according to
automotive specifications.
PARTS TABLE
CARRIER FREQUENCY
30 kHz
33 kHz
36 kHz
38 kHz
40 kHz
56 kHz
SHORT BURSTS AND HIGH DATA RATES (AGC1) NOISY ENVIROMENTS AND SHORT BURSTS (AGC3)
TSOP58130
TSOP58133
TSOP58136
TSOP58138
TSOP58140
TSOP58156
TSOP58330
TSOP58333
TSOP58336
TSOP58338
TSOP58340
TSOP58356
BLOCK DIAGRAM
16833_5
APPLICATION CIRCUIT
17170_7
R
1
IR receiver
V
S
+ V
S
C
1
OUT
GND
V
O
µC
GND
3
33 kΩ
V
S
1
Input
AGC
Band
pass
Demo-
dulator
OUT
Transmitter
with
TSALxxxx
2
PIN
Control circuit
GND
The external components R
1
and C
1
are optional
to improve the robustness against electrical overstress
(typical values are R
1
= 100
Ω,
C
1
= 0.1 µF).
The output voltage V
O
should not be pulled down to a level
below 1 V by the external circuit.
The capacitive load at the output should be less than 2 nF.
Document Number: 81398
Rev. 1.5, 20-Aug-10
Circuit
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1
TSOP581.., TSOP583..
Vishay Semiconductors
IR Receiver Modules for Remote
Control Systems
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage (pin 3)
Supply current (pin 3)
Output voltage (pin 1)
Voltage at output to supply
Output current (pin 1)
Junction temperature
Storage temperature range
Operating temperature range
Power consumption
Soldering temperature
T
amb
≤
85 °C
t
≤
10 s, 1 mm from case
TEST CONDITION
SYMBOL
V
S
I
S
V
O
V
S
- V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
VALUE
- 0.3 to + 6
5
- 0.3 to 5.5
- 0.3 to (V
S
+ 0.3)
5
100
- 25 to + 85
- 25 to + 85
10
260
UNIT
V
mA
V
V
mA
°C
°C
°C
mW
°C
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Supply current (pin 3)
Supply voltage
Transmission distance
Output voltage low (pin 1)
Minimum irradiance
Maximum irradiance
Directivity
E
v
= 0, test signal see fig. 1,
IR diode TSAL6200,
I
F
= 400 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
TEST CONDITION
E
v
= 0, V
S
= 5 V
E
v
= 40 klx, sunlight
SYMBOL
I
SD
I
SH
V
S
d
V
OSL
E
e min.
E
e max.
ϕ
1/2
30
± 45
0.3
2.7
40
100
0.45
MIN.
0.65
TYP.
0.85
0.95
5.5
MAX.
1.05
UNIT
mA
mA
V
m
mV
mW/m
2
W/m
2
deg
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, N = 6 pulses, f = f
O
, t = 10 ms)
0.35
t
po
- Output Pulse Width (ms)
0.30
0.25
0.20
0.15
Input Burst Length
0.10
0.05
0
λ
= 950 nm,
Optical Test Signal, Fig.1
0.1
1
10
10
2
10
3
10
4
10
5
Output Pulse Width
t
pi
*)
T
t
*) t
pi
≥
6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d 1)
1)
2)
14337
3/f
O
< t
d
< 9/f
O
t
pi
- 4/f
O
< t
po
< t
pi
+ 6/f
O
t
po 2)
t
21391_1
E
e
- Irradiance (mW/m²)
Fig. 1 - Output Active Low
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
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Document Number: 81398
Rev. 1.5, 20-Aug-10
TSOP581.., TSOP583..
IR Receiver Modules for Remote
Control Systems
Vishay Semiconductors
E
e
E
e min.
- Threshold Irradiance (mW/m
2
)
Optical Test Signal
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.01
0.1
1
10
100
Wavelength of Ambient
Illumination:
λ
= 950 nm
Correlation with Ambient Light Sources:
10 W/m
2
= 1.4 kLx (Std. illum. A, T = 2855 K)
10 W/m
2
= 8.2 kLx (Daylight, T = 5900 K)
600 µs
t = 60 ms
Output Signal,
(see fig. 4)
600 µs
t
94 8134
V
O
V
OH
V
OL
t
on
t
off
t
21393
E
e
- Ambient DC Irradiance (W/m
2
)
Fig. 3 - Output Function
Fig. 6 - Sensitivity in Bright Ambient
E
e min.
- Threshold Irradiance (mW/m
2
)
0.8
1.0
0.9
0.8
0.7
f = 30 kHz
0.6
0.5
f = 20 kHz
0.4
0.3
0.2
0.1
0
1
10
100
f = 10 kHz
f = 100 Hz
1000
f = f
0
T
on
, T
off
- Output Pulse Width (ms)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
λ
= 950 nm,
Optical Test Signal, Fig. 3
T
on
T
off
1
10
10
2
10
3
10
4
10
5
21394
21392_1
E
e
- Irradiance (mW/m²)
ΔVs
RMS
- AC Voltage on DC Supply Voltage (mV)
Fig. 4 - Output Pulse Diagram
Fig. 7 - Sensitivity vs. Supply Voltage Disturbances
1.2
500
E
e min.
/E
e
- Rel. Responsivity
1.0
0.8
0.6
0.4
0.2
0.0
0.7
0.9
1.1
1.3
E - Max. Field Strength (V/m)
450
400
350
300
250
200
150
100
50
0
0
500
1000
1500
2000
2500
3000
f = f
0
± 5 %
f (3 dB) = f
0
/7
16926
20747
f/f
0
- Relative Frequency
f - EMI Frequency (MHz)
Fig. 5 - Frequency Dependence of Responsivity
Fig. 8 - Sensitivity vs. Electric Field Disturbances
Document Number: 81398
Rev. 1.5, 20-Aug-10
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3
TSOP581.., TSOP583..
Vishay Semiconductors
IR Receiver Modules for Remote
Control Systems
1
0.9
0°
10°
20°
30°
Max. Envelope Duty Cycle
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
E
e
= 2 mW/m²
20
40
60
80
100
120
140
19258
40°
TSOP581..
1.0
0.9
TSOP583..
0.8
50°
60°
70°
0.7
80°
0.6
0.4
0.2
0
21590-3
Burst Length (number of cycles/burst)
d
rel
- Relative Transmission Distance
Fig. 9 - Max. Envelope Duty Cycle vs. Burst Length
Fig. 12 - Horizontal Directivity
0°
10°
20°
30°
E
e min.
- Threshold Irradiance (mW/m
2
)
0.45
0.4
0.35
40°
1.0
0.3
0.25
0.2
0.15
- 30
0.9
0.8
50°
60°
70°
0.7
80°
0.6
19259
- 10
10
30
50
70
90
0.4
0.2
0
21397
T
amb
- Ambient Temperature (°C)
d
rel
- Relative Transmission Distance
Fig. 10 - Sensitivity vs. Ambient Temperature
Fig. 13 - Vertical Directivity
S (λ)
rel
- Relative Spectral Sensitivity
1.2
0.50
E
e min.
- Sensitivity (mW/m
2
)
850
950
1050
1150
1.0
0.8
0.6
0.4
0.2
0
750
0.45
0.40
0.35
0.30
0.25
0.20
1.5
2
2.5
3
3.5
4
4.5
5
5.5
94 8408
λ
- Wavelength (nm)
21398
V
S
- Supply Voltage (V)
Fig. 11 - Relative Spectral Sensitivity vs. Wavelength
Fig. 14 - Sensitivity vs. Supply Voltage
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Document Number: 81398
Rev. 1.5, 20-Aug-10
TSOP581.., TSOP583..
IR Receiver Modules for Remote
Control Systems
SUITABLE DATA FORMAT
The TSOP581.., TSOP583.. are designed to suppress
spurious output pulses due to noise or disturbance signals.
Data and disturbance signals can be distinguished by the
devices according to carrier frequency, burst length and
envelope duty cycle. The data signal should be close to the
band-pass center frequency (e.g. 38 kHz) and fulfill the
conditions in the table below.
When a data signal is applied to the TSOP581.., TSOP583..
in the presence of a disturbance signal, the sensitivity of the
receiver is reduced to insure that no spurious pulses are
present at the output. Some examples of disturbance
signals which are suppressed are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signals at any frequency
• Modulated IR signals from common fluorescent lamps
(example of noise pattern is shown in fig. 15 or fig. 16)
Vishay Semiconductors
IR Signal
IR Signal from Fluorescent
Lamp with Low Modulation
0
16920
5
10
15
20
Time (ms)
Fig. 15 - IR Signal from Fluorescent Lamp
with Low Modulation
IR Signal from Fluorescent
Lamp with High Modulation
IR Signal
0
16921
5
10
15
20
Time (ms)
Fig. 16 - IR Signal from Fluorescent Lamp
with High Modulation
TSOP581..
Minimum burst length
After each burst of length
a minimum gap time is required of
For bursts greater than
a minimum gap time in the data stream is needed of
Maximum number of continuous short bursts/second
Recommended for NEC code
Recommended for RC5/RC6 code
Recommended for Sony code
Recommended for RECS-80 code
Recommended for RCMM code
Recommended for r-step code
Recommended for XMP code
Suppression of interference from fluorescent lamps
6 cycles/burst
6 to 70 cycles
≥
10 cycles
70 cycles
> 1.1 x burst length
2000
yes
yes
yes
yes
yes
yes
yes
Common disturbance signals are
supressed (e.g. waveform of figure 15)
TSOP583..
6 cycles/burst
6 to 35 cycles
≥
10 cycles
35 cycles
> 6 x burst length
2000
yes
yes
yes
yes
yes
yes
yes
Even critical disturbance signals are
suppressed (e.g. waveform of figure 16)
Note
• For data formats with long bursts (more than 10 carrier cycles) please see the datasheet for TSOP582.., TSOP584.. .
Document Number: 81398
Rev. 1.5, 20-Aug-10
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