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28F320J5

Description
2M X 16 FLASH 5V PROM, 120 ns, PDSO56
Categorystorage   
File Size372KB,51 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric Compare View All

28F320J5 Overview

2M X 16 FLASH 5V PROM, 120 ns, PDSO56

28F320J5 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals56
Maximum operating temperature85 Cel
Minimum operating temperature-20 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage4.5 V
Rated supply voltage5 V
maximum access time120 ns
Processing package description16 X 23.70 MM, SSOP-56
stateDISCONTINUED
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, SHRINK PITCH
surface mountYes
Terminal formGULL WING
Terminal spacing0.8000 mm
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelOTHER
memory width16
organize2M X 16
storage density3.36E7 deg
operating modeASYNCHRONOUS
Number of digits2.10E6 words
Number of digits2M
Spare memory width8
Memory IC typeFLASH 5V PROM
serial parallelPARALLEL
5 Volt Intel StrataFlash
®
Memory
28F320J5 and 28F640J5 (x8/x16)
Datasheet
Product Features
s
s
s
s
s
High-Density Symmetrically-Blocked
Architecture
— 64 128-Kbyte Erase Blocks (64 M)
— 32 128-Kbyte Erase Blocks (32 M)
4.5 V–5.5 V V
CC
Operation
— 2.7 V–3.6 V and 4.5 V–5.5 V I/O
Capable
120 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
Enhanced Data Protection Features
— Absolute Protection with
V
PEN
= GND
— Flexible Block Locking
— Block Erase/Program Lockout during
Power Transitions
Industry-Standard Packaging
— SSOP Package (32, 64 M)
TSOP Package (32 M)
s
s
s
s
s
s
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
— Scalable Command Set
32-Byte Write Buffer
— 6 µs per Byte Effective Programming
Time
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
— 100,000 Erase Cycles per Block
Automation Suspend Options
— Block Erase Suspend to Read
— Block Erase Suspend to Program
System Performance Enhancements
— STS Status Output
Operating Temperature –20 °C to + 85 °C
(–40 °C to +85 °C on .25
micron ETOX VI)
process technology parts)
Capitalizing on two-bit-per-cell technology, 5 Volt Intel StrataFlash
®
memory products provide 2X the bits
in 1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory
devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX™ V process technology and Intel’s 0.25 micron ETOX VI
process technology, 5 Volt Intel StrataFlash memory provides the highest levels of quality and reliability.
Notice:
This document contains information on products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
Order Number: 290606-015
April 2002

28F320J5 Related Products

28F320J5 28F320J5_02 DA28F640J5-150 DA28F320J5-120 E28F320J5-120 E28F320J5A-120 DA28F320J5A-120 DA28F640J5A-150 28F640J5
Description 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 150 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56
Number of functions 1 1 1 1 1 1 1 1 1
Number of terminals 56 56 56 56 56 56 56 56 56
Maximum operating temperature 85 Cel 85 Cel 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 Cel
Minimum operating temperature -20 Cel -20 Cel -20 °C -20 °C -20 °C -20 °C -20 °C -20 °C -20 Cel
surface mount Yes Yes YES YES YES YES YES YES Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Temperature level OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER
memory width 16 16 16 16 16 16 16 16 16
organize 2M X 16 2M X 16 4MX16 2MX16 2MX16 2MX16 2MX16 4MX16 2M X 16
Spare memory width 8 8 8 8 8 8 8 8 8
Parts packaging code - - SSOP SSOP TSOP TSOP SSOP SSOP -
package instruction - - SSOP, SOP56,.6,32 SSOP, SOP56,.6,32 14 X 20 MM, TSOP-56 14 X 20 MM, TSOP-56 SSOP, SOP56,.6,32 16 X 23.70 MM, SSOP-56 -
Contacts - - 56 56 56 56 56 56 -
Reach Compliance Code - - unknow unknow unknow unknow unknow unknow -
ECCN code - - 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A -
Maximum access time - - 150 ns 120 ns 120 ns 120 ns 150 ns 150 ns -
command user interface - - YES YES YES YES YES YES -
Universal Flash Interface - - YES YES YES YES YES YES -
Data polling - - NO NO NO NO NO NO -
JESD-30 code - - R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 -
length - - 23.7 mm 23.7 mm 18.4 mm 18.4 mm 23.7 mm 23.7 mm -
memory density - - 67108864 bi 33554432 bi 33554432 bi 33554432 bi 33554432 bi 67108864 bi -
Memory IC Type - - FLASH FLASH FLASH FLASH FLASH FLASH -
Number of departments/size - - 64 32 32 32 32 64 -
word count - - 4194304 words 2097152 words 2097152 words 2097152 words 2097152 words 4194304 words -
character code - - 4000000 2000000 2000000 2000000 2000000 4000000 -
Operating mode - - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code - - SSOP SSOP TSOP1 TSOP1 SSOP SSOP -
Encapsulate equivalent code - - SOP56,.6,32 SOP56,.6,32 TSSOP56,.8,20 TSSOP56,.8,20 SOP56,.6,32 SOP56,.6,32 -
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - - SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH -
Parallel/Serial - - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
power supply - - 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V -
Programming voltage - - 5 V 5 V 5 V 5 V 5 V 5 V -
Certification status - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
ready/busy - - YES YES YES YES YES YES -
Maximum seat height - - 1.9 mm 1.9 mm 1.2 mm 1.2 mm 1.9 mm 1.9 mm -
Department size - - 128K 128K 128K 128K 128K 128K -
Maximum standby current - - 0.000125 A 0.000125 A 0.000125 A 0.000125 A 0.000125 A 0.000125 A -
Maximum slew rate - - 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA -
Maximum supply voltage (Vsup) - - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V -
Minimum supply voltage (Vsup) - - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V -
Nominal supply voltage (Vsup) - - 5 V 5 V 5 V 5 V 5 V 5 V -
technology - - CMOS CMOS CMOS CMOS CMOS CMOS -
Terminal pitch - - 0.8 mm 0.8 mm 0.5 mm 0.5 mm 0.8 mm 0.8 mm -
switch bit - - NO NO NO NO NO NO -
type - - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE -
width - - 13.3 mm 13.3 mm 14 mm 14 mm 13.3 mm 13.3 mm -
Base Number Matches - - 1 1 1 1 1 1 -
Is it Rohs certified? - - - incompatible incompatible incompatible incompatible incompatible -
JESD-609 code - - - e0 e0 e0 e0 e0 -
Peak Reflow Temperature (Celsius) - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Terminal surface - - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Maximum time at peak reflow temperature - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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