S34B10B datasheet, PDF - EEWORLD Datasheet

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S34B10B: DescriptionSilicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AC; CategoryAnalog mixed-signal IC Trigger device; File Size39KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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S34B10B Overview

Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AC

S34B10B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
Nominal circuit commutation break time	120 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	500 mA
JEDEC-95 code	TO-200AC
JESD-30 code	O-CEDB-N2
Maximum leakage current	50 mA
Humidity sensitivity level	1
On-state non-repetitive peak current	15400 A
Number of components	1
Number of terminals	2
Maximum on-state current	670000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum rms on-state current	1050 A
Off-state repetitive peak voltage	1000 V
Repeated peak reverse voltage	1000 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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S34B10B Related Products

	S34B10B	S34B12B	S34B14A	S34B16A
Description	Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AC	Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC	Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AC	Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-200AC
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown	unknown	unknown	unknown
Nominal circuit commutation break time	120 µs	120 µs	120 µs	120 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us	500 V/us	500 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA	150 mA
Maximum DC gate trigger voltage	2.5 V	2.5 V	2.5 V	2.5 V
Maximum holding current	500 mA	500 mA	500 mA	500 mA
JEDEC-95 code	TO-200AC	TO-200AC	TO-200AC	TO-200AC
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum leakage current	50 mA	50 mA	50 mA	50 mA
Humidity sensitivity level	1	1	1	1
On-state non-repetitive peak current	15400 A	15400 A	15400 A	15400 A
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum on-state current	670000 A	670000 A	670000 A	670000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	225	225	225	225
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	1050 A	1050 A	1050 A	1050 A
Off-state repetitive peak voltage	1000 V	1200 V	1400 V	1600 V
Repeated peak reverse voltage	1000 V	1200 V	1400 V	1600 V
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1

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