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S34B12B

Description
Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC
CategoryAnalog mixed-signal IC    Trigger device   
File Size39KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

S34B12B Overview

Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC

S34B12B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codeunknown
Nominal circuit commutation break time120 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current500 mA
JEDEC-95 codeTO-200AC
JESD-30 codeO-CEDB-N2
Maximum leakage current50 mA
Humidity sensitivity level1
On-state non-repetitive peak current15400 A
Number of components1
Number of terminals2
Maximum on-state current670000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current1050 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1

S34B12B Related Products

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Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2
Reach Compliance Code unknown unknown unknown unknown
Nominal circuit commutation break time 120 µs 120 µs 120 µs 120 µs
Configuration SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 500 V/us 500 V/us 500 V/us 500 V/us
Maximum DC gate trigger current 150 mA 150 mA 150 mA 150 mA
Maximum DC gate trigger voltage 2.5 V 2.5 V 2.5 V 2.5 V
Maximum holding current 500 mA 500 mA 500 mA 500 mA
JEDEC-95 code TO-200AC TO-200AC TO-200AC TO-200AC
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum leakage current 50 mA 50 mA 50 mA 50 mA
Humidity sensitivity level 1 1 1 1
On-state non-repetitive peak current 15400 A 15400 A 15400 A 15400 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum on-state current 670000 A 670000 A 670000 A 670000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) 225 225 225 225
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 1050 A 1050 A 1050 A 1050 A
Off-state repetitive peak voltage 1200 V 1000 V 1400 V 1600 V
Repeated peak reverse voltage 1200 V 1000 V 1400 V 1600 V
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR
Base Number Matches 1 1 1 1
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