SD219DE datasheet, PDF - EEWORLD Datasheet

SD219DE: DescriptionSmall Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size75KB，3 Pages; ManufacturerCalogic; Websitehttp://www.calogic.net/

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SD219DE Overview

Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4

Parameter Name	Attribute value
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	SUBSTRATE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.16 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1.2 W
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

This Material Copyrighted By Its Respective Manufacturer

	SD219DE	XSD217
Description	Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4	Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	CYLINDRICAL, O-MBCY-W4	UNCASED CHIP, R-XUUC-N4
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V	25 V
Maximum drain current (Abs) (ID)	0.05 A	1 A
Maximum drain current (ID)	0.16 A	0.16 A
Maximum drain-source on-resistance	5 Ω	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-MBCY-W4	R-XUUC-N4
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	125 °C	125 °C
Package body material	METAL	UNSPECIFIED
Package shape	ROUND	RECTANGULAR
Package form	CYLINDRICAL	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	WIRE	NO LEAD
Terminal location	BOTTOM	UPPER
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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