XSD217 datasheet, PDF - EEWORLD Datasheet

XSD217: DescriptionSmall Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size75KB，3 Pages; ManufacturerCalogic; Websitehttp://www.calogic.net/

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XSD217 Overview

Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	UNCASED CHIP, R-XUUC-N4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	0.16 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

This Material Copyrighted By Its Respective Manufacturer

	XSD217	SD219DE
Description	Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4
package instruction	UNCASED CHIP, R-XUUC-N4	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V	25 V
Maximum drain current (Abs) (ID)	1 A	0.05 A
Maximum drain current (ID)	0.16 A	0.16 A
Maximum drain-source on-resistance	5 Ω	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N4	O-MBCY-W4
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	125 °C	125 °C
Package body material	UNSPECIFIED	METAL
Package shape	RECTANGULAR	ROUND
Package form	UNCASED CHIP	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	NO LEAD	WIRE
Terminal location	UPPER	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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