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XSD217

Description
Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size75KB,3 Pages
ManufacturerCalogic
Websitehttp://www.calogic.net/
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XSD217 Overview

Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

XSD217 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionUNCASED CHIP, R-XUUC-N4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)1 A
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

XSD217 Related Products

XSD217 SD219DE
Description Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4
package instruction UNCASED CHIP, R-XUUC-N4 CYLINDRICAL, O-MBCY-W4
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (Abs) (ID) 1 A 0.05 A
Maximum drain current (ID) 0.16 A 0.16 A
Maximum drain-source on-resistance 5 Ω 5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XUUC-N4 O-MBCY-W4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 125 °C 125 °C
Package body material UNSPECIFIED METAL
Package shape RECTANGULAR ROUND
Package form UNCASED CHIP CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form NO LEAD WIRE
Terminal location UPPER BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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