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UNR5210G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size628KB,18 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UNR5210G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

UNR5210G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR521xG Series
Silicon NPN epitaxial planar type
For digital circuits
Features
Package
Resistance by Part Number
UNR5210G
UNR5211G
UNR5212G
UNR5213G
UNR5214G
UNR5215G
UNR5216G
UNR5217G
UNR5218G
UNR5219G
UNR521DG
UNR521EG
UNR521FG
UNR521KG
UNR521LG
UNR521MG
UNR521NG
UNR521TG
UNR521VG
UNR521ZG
Parameter
int
en
Absolute Maximum Ratings
T
a
=
25°C
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
an
ce
Marking symbol (R
1
)
8L
47 kΩ
8A
10 kΩ
8B
22 kΩ
8C
47 kΩ
8D
10 kΩ
8E
10 kΩ
8F
4.7 kΩ
8H
22 kΩ
8I
0.51 kΩ
8K
1 kΩ
8M
47 kΩ
8N
47 kΩ
8O
4.7 kΩ
8P
10 kΩ
8Q
4.7 kΩ
EL
2.2 kΩ
EX
4.7 kΩ
EZ
22 kΩ
FD
2.2 kΩ
FF
4.7 kΩ
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(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
M
ain
Di
sc te
on na
tin nc
ue e/
d
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
Code
SMini3-F2
Pin Name
1: Base
2: Emitter
3: Collector
R
1
B
R
2
Internal Connection
C
E
/D
isc
on
tin
ue
Rating
50
50
Unit
V
V
Ma
100
150
150
mA
°C
°C
mW
−55
to
+150
Publication date: June 2007
SJH00218AED
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