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UN5210R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size586KB,17 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UN5210R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN

UN5210R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)210
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR521x Series
(UN521x Series)
Silicon NPN epitaxial planar type
Unit: mm
(0.425)
For digital circuits
Features
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
M
Di ain
sc te
on na
tin nc
ue e/
d
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
1.25
±0.10
Resistance by Part Number
UNR5210
UNR5211
UNR5212
UNR5213
UNR5214
UNR5215
UNR5216
UNR5217
UNR5218
UNR5219
UNR521D
UNR521E
UNR521F
UNR521K
UNR521L
UNR521M
UNR521N
UNR521T
UNR521V
UNR521Z
M
Pl
e
Total power dissipation
Junction temperature
Storage temperature
ai
Collector current
nt
Collector-emitter voltage (Base open)
en
Collector-base voltage (Emitter open)
an
Parameter
ce
Absolute Maximum Ratings
T
a
=
25°C
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
/D
is
co
Marking symbol (R
1
)
(UN5210)
8L
47 kΩ
(UN5211)
8A
10 kΩ
(UN5212)
8B
22 kΩ
(UN5213)
8C
47 kΩ
(UN5214)
8D
10 kΩ
(UN5215)
8E
10 kΩ
(UN5216)
8F
4.7 kΩ
(UN5117)
8H
22 kΩ
(UN5218)
8I
0.51 kΩ
(UN5219)
8K
1 kΩ
(UN521D)
8M
47 kΩ
(UN521E)
8N
47 kΩ
(UN521F)
8O
4.7 kΩ
(UN521K)
8P
10 kΩ
(UN521L)
8Q
4.7 kΩ
(UN521M) EL
2.2 kΩ
(UN521N)
EX
4.7 kΩ
(UN521T)
EZ
22 kΩ
(UN521V)
FD
2.2 kΩ
(UN521Z)
FF
4.7 kΩ
T
stg
Publication date: January 2004
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as
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:// g nt n ce c g
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so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
2.1
±0.1
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
0.9
±0.1
0.9
+0.2
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R
1
0 to 0.1
B
C
R
2
E
nt
in
ue
Rating
50
50
Unit
V
V
100
150
150
mA
°C
°C
mW
−55
to
+150
Note) The part numbers in the parenthesis show conventional part number.
SJH00024CED
0.2
±0.1
1
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