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ES1ALMH

Description
Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size375KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

ES1ALMH Overview

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN

ES1ALMH Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
ES1AL thru ES1JL
Taiwan Semiconductor
CREAT BY ART
Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR T
J
=25
T
J
=125
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
Trr
R
θJL
R
θJA
T
J
T
STG
10
35
35
85
- 55 to +150
- 55 to +150
O
SYMBOL
ES
1AL
EAL
50
35
50
ES
1BL
EBL
100
70
100
ES
1CL
ECL
150
105
150
ES
1DL
EDL
200
140
200
1
30
ES
1FL
EFL
300
210
300
ES
1GL
EGL
400
280
400
ES
1HL
EHL
500
350
500
ES
1JL
EJL
600
420
600
UNIT
V
V
V
A
A
0.95
5
100
1.3
1.7
V
μA
8
pF
ns
C/W
O
O
C
C
Document Number: DS_D1405035
Version: I14
Chapter 12 Advanced I/O
12.1 Introduction 273 12.2 Nonblocking I/O 273 12.3 Record Locks 275 12.3.1 History 276 12.3.2 fcntl Record Locks 276 12.3.3 Implicit Lock Inheritance and Release 280 12.3.4 4.3+BSD Implementation 281...
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