FHT3837R datasheet, PDF - EEWORLD Datasheet

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FHT3837R: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size90KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHT3837R Overview

Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FHT3837R Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	18 V
Configuration	SINGLE
Minimum DC current gain (hFE)	180
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1500 MHz
Base Number Matches	1

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RF Transistors

DESCRIPTION & FEATURES

概述及特點

High Frequency Low Noise Amplifier

高頻½雜訊放大

PIN ASSIGNMENT

引腳說明

PIN NAME

FUNCTION

PIN NUMBER

引腳序號

管腳符號

功½

SOT-23

BASE

EMITTER

COLLECTOR

MAXIMUM RATINGS(T

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Symbol

符號

Collector-Emitter Voltage

集電極-發射極電壓

CEO

Collector-Base Voltage

集電極-基極電壓

CBO

Emitter-Base Voltage

發射極-基極電壓

EBO

Collector Current—Continuous

集電極電流-連續

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Symbol

符號

Collector Power Dissipation

集電極耗散功率

Junction and Storage Temperature結溫和儲存溫度

stg

DEVICE MARKING

打標

（1）FHT3837N=CN(56~120),FHT3837P=CP(80~180)

FHT3837Q=CQ(120~270), FHT3837R=CR(180~390)

ELECTRICAL CHARACTERISTICS

電特性

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Characteristic

特性參數

符號

測試條件

Collector Cutoff Current

集電極截止電流

Emitter Cutoff Current

發射極截止電流

Collector-Emitter Breakdown Voltage

集電極-發射極擊穿電壓

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

DC Current Gain

直流電流增益

Collector-Emitter Saturation Voltage

集電極-發射極½和壓降

Transition Frequency

特徵頻率

Collector Output Capacitance

輸出電容

Collector-Base Time Constant

集電極-基極時間常數

Noise Factor

雜訊係數

FHT3837

SOT-23

Rating

額定值

3.0

Max

最大值

300

150，

-55 ~150

Unit

單½

Vdc

mAdc

Unit

單½

℃

Min

最小值

—

600

—

Type

典型值

—

1500

0.9

4.5

Max

最大值

0.5

—

390

0.5

—

1.5

—

Unit

單½

µA

—

MHz

CBO

EBO

(BR)CEO

(BR)CBO

(BR)EBO

CE(sat)

rbb’·Cc

=10V,I

=2V,I

=1.0mA

=10µA

=10V,I

=10mA

=20mA,I

=4mA

=10V,I

=10mA,

f=200MHz

=10V,I

=0,

f=1MHz

=10V,I

=10mA,

f=31.8MHz

=12V,I

=2mA,

f=200MHz,Rg=50Ω

FHT3837R Related Products

	FHT3837R	FHT3837P	FHT3837N	FHT3837Q	FHT3837
Description	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	18 V	18 V	18 V	18 V	18 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	180	80	56	120	56
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1500 MHz	1500 MHz	1500 MHz	1500 MHz	1500 MHz
Maker	-	-	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.

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