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FHT3837N

Description
Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,1 Pages
ManufacturerFenghua (HK) Electronics Ltd.
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FHT3837N Overview

Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FHT3837N Parametric

Parameter NameAttribute value
MakerFenghua (HK) Electronics Ltd.
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage18 V
ConfigurationSINGLE
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1500 MHz
RF Transistors
RF Transistors
DESCRIPTION & FEATURES
概述及特點
High Frequency Low Noise Amplifier
高頻½雜訊放大
PIN ASSIGNMENT
引腳說明
PIN NAME
FUNCTION
PIN NUMBER
引腳序號
管腳符號
功½
SOT-23
B
1
BASE
E
2
EMITTER
C
3
COLLECTOR
MAXIMUM RATINGS(T
a
=25℃)
最大額定值
CHARACTERISTIC
特性參數
Symbol
符號
Collector-Emitter Voltage
集電極-發射極電壓
V
CEO
Collector-Base Voltage
集電極-基極電壓
V
CBO
Emitter-Base Voltage
發射極-基極電壓
V
EBO
Collector Current—Continuous
集電極電流-連續
I
C
THERMAL CHARACTERISTICS
熱特性
CHARACTERISTIC
特性參數
Symbol
符號
Collector Power Dissipation
集電極耗散功率
P
c
T
j
,
Junction and Storage Temperature結溫和儲存溫度
T
stg
DEVICE MARKING
打標
h
FE
(1)FHT3837N=CN(56~120),FHT3837P=CP(80~180)
FHT3837Q=CQ(120~270), FHT3837R=CR(180~390)
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明,溫度為
25℃)
Symbol
Test Condition
Characteristic
特性參數
符號
測試條件
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
Collector-Base Time Constant
集電極-基極時間常數
Noise Factor
雜訊係數
FHT3837
SOT-23
Rating
額定值
18
30
3.0
50
Max
最大值
300
150,
-55 ~150
Unit
單½
Vdc
Vdc
Vdc
mAdc
Unit
單½
mW
Min
最小值
18
30
3
56
600
Type
典型值
1500
0.9
6
4.5
Max
最大值
0.5
0.5
390
0.5
1.5
13
Unit
單½
µA
µA
V
V
V
V
MHz
pF
ps
dB
I
CBO
I
EBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
V
CE(sat)
f
T
C
ob
rbb’·Cc
NF
V
CB
=10V,I
E
=0
V
EB
=2V,I
C
=0
I
C
=1.0mA
I
C
=10µA
I
E
=10µA
V
CE
=10V,I
C
=10mA
I
C
=20mA,I
B
=4mA
V
CE
=10V,I
E
=10mA,
f=200MHz
V
CB
=10V,I
E
=0,
f=1MHz
V
CB
=10V,I
C
=10mA,
f=31.8MHz
V
CE
=12V,I
C
=2mA,
f=200MHz,Rg=50Ω
1

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Description Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 18 V 18 V 18 V 18 V 18 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 56 80 180 120 56
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 1500 MHz 1500 MHz 1500 MHz 1500 MHz 1500 MHz
Maker Fenghua (HK) Electronics Ltd. - - Fenghua (HK) Electronics Ltd. Fenghua (HK) Electronics Ltd.

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