FQI7N40TU datasheet, PDF - EEWORLD Datasheet

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FQI7N40TU: DescriptionPower Field-Effect Transistor, 7A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3; CategoryDiscrete semiconductor The transistor; File Size787KB，11 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FQI7N40TU Overview

Power Field-Effect Transistor, 7A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

FQI7N40TU Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-262
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	360 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (Abs) (ID)	7 A
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3.13 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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