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24AA1025T

Description
128K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Categorystorage   
File Size631KB,28 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

24AA1025T Overview

128K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

24AA1025T Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage2.5 V
Rated supply voltage3 V
maximum clock frequency0.4000 MHz
Processing package description5.28 MM, ROHS COMPLIANT, PLASTIC, SOIJ-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width8
organize128K × 8
storage density1.05E6 deg
operating modeSynchronize
Number of digits131072 words
Number of digits128K
Memory IC typeI2C/2-wire serial electrically erasable read-only memory
serial parallelserial
Maximum TWC of write cycle5 ms
24AA1025/24LC1025/24FC1025
1024K I
2
C
Serial EEPROM
Device Selection Table:
Part
Number
24AA1025
24LC1025
24FC1025
V
CC
Range
1.7-5.5V
2.5-5.5V
1.8-5.5V
Max. Clock
Frequency
400 kHz
400 kHz*
1 MHz
Temp.
Ranges
I
I, E
I
This device is capable of both random and sequential
reads. Reads may be sequential within address
boundaries 0000h to FFFFh and 10000h to 1FFFFh.
Functional address lines allow up to four devices on the
same data bus. This allows for up to 4 Mbits total
system EEPROM memory. This device is available in
the standard 8-pin PDIP, SOIC and SOIJ packages.
100 kHz for V
CC
< 2.5V
*100 kHz for V
CC
< 4.5V, E-temp
400 kHz for V
CC
< 2.5V
Package Type
PDIP
A0
A1
A2*
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
Features:
• Low-Power CMOS Technology:
- Read current 450
A,
maximum
- Standby current 5
A,
maximum
• 2-Wire Serial Interface, I
2
C™ Compatible
• Cascadable up to Four Devices
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kHz and 400 kHz Clock Compatibility
• 1 MHz Clock for FC Versions
• Page Write Time 3 ms, typical
• Self-Timed Erase/Write Cycle
• 128-Byte Page Write Buffer
• Hardware Write-Protect
• ESD Protection >4000V
• More than 1 Million Erase/Write Cycles
• Data Retention >200 Years
• Factory Programming Available
• Packages include 8-lead PDIP, SOIJ and SOIC
• Pb-Free and RoHS Compliant
• Temperature Ranges:
- Industrial (I):
-40C to +85C
- Automotive (E): -40C to +125C
SOIJ/SOIC
A0
A1
A2*
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
*A2 must be tied to V
CC
.
Block Diagram
A0 A1
WP
HV Generator
I/O
Control
Logic
Memory
Control
Logic
XDEC
EEPROM
Array
Page Latches
I/O
SCL
YDEC
Description:
The Microchip Technology Inc. 24AA1025/24LC1025/
24FC1025 (24XX1025*) is a 128K x 8 (1024K bit)
Serial Electrically Erasable PROM, capable of
operation across a broad voltage range (1.7V to 5.5V).
It has been developed for advanced, low-power
applications such as personal communications or data
acquisition. This device has both byte write and page
write capability of up to 128 bytes of data.
SDA
V
CC
V
SS
Sense AMP
R/W Control
*24XX1025 is used in this document as a generic part number
for the 24AA1025/24LC1025/24FC1025 devices.
2005-2013 Microchip Technology Inc.
DS20001941L-page 1

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